MOCVD‐Grown MoS ₂ Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

ジャーナル論文

著者

Shuhong Li (author) (この著者で検索)

Shuhong Li ;

Juiteng Chang (author) (この著者で検索)

Juiteng Chang ;

Keisuke Atsumi (author) (この著者で検索)

Keisuke Atsumi ;

Kosei Matsumoto (author) (この著者で検索)

Kosei Matsumoto ;

Itsuki Tanaka (author) (この著者で検索)

Itsuki Tanaka ;

Tomonori Nishimura (author) (この著者で検索)

Tomonori Nishimura ;

Kaito Kanahashi (author) (この著者で検索)

Kaito Kanahashi ;

Takahiro Nagata (author) (この著者で検索)

https://orcid.org/0000-0002-8591-2943

NIMS Researchers Directory SAMURAI

Takahiro Nagata ;

Jun Nara (author) (この著者で検索)

Jun Nara ;

Yoshiki Sakuma (author) (この著者で検索)

Yoshiki Sakuma ;

Emi Kano (author) (この著者で検索)

Emi Kano ;

Nobuyuki Ikarashi (author) (この著者で検索)

Nobuyuki Ikarashi ;

Kosuke Nagashio (author) (この著者で検索)

https://orcid.org/0000-0003-1181-8644 (unauthenticated)

Kosuke Nagashio

キーワード

MOCVD-grownMoS2wafers, interfacialchargetransfer, transfer-freedevicefabrication, top-gatefield-effecttransistors, wafer-scale2Dsemiconductors

刊行年月日

2026-07-05

更新時刻

2026-07-29 09:15:47 +0900