4 件のレコードが見つかりました。
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
- ジャーナル論文
- 著者
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Ashutosh Kumar (author) (この著者で検索)
https://orcid.org/0000-0002-8085-1598
(unauthenticated)
National Institute for Materials Science
;
;Martin Berg (author) (この著者で検索);Qin Wang (author) (この著者で検索)Jun Uzuhashi (author) (この著者で検索)National Institute for Materials Science
;
Tadakatsu Ohkubo (author) (この著者で検索)National Institute for Materials Science
;
;Michael Salter (author) (この著者で検索)Peter Ramvall (author) (この著者で検索) - キーワード
- gallium nitride, scanning transmission electron microscopy, semiconductor, activation
- 刊行年月日
- 2023-07-21
- 更新時刻
- 2024-01-05 22:12:15 +0900
Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer
- ジャーナル論文
- 著者
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Jun Uzuhashi (author) (この著者で検索)National Institute for Materials Science Research Center for Magnetic and Spintronic Materials/Administrative Office
;
Jun Chen (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Defect Design Group
;
;Ryo Tanaka (author) (この著者で検索)Fuji Electric Corporation;Shinya Takashima (author) (この著者で検索)Fuji Electric Corporation;Masaharu Edo (author) (この著者で検索)Fuji Electric CorporationTadakatsu Ohkubo (author) (この著者で検索)National Institute for Materials Science Research Center for Magnetic and Spintronic Materials
;
Takashi Sekiguchi (author) (この著者で検索)University of Tsukuba
- キーワード
- gallium nitride, atom probe tomography, transmission electron microscopy, cathodoluminescence
- 刊行年月日
- 2024-08-07
- 更新時刻
- 2024-08-03 08:30:15 +0900
Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
- ジャーナル論文
- 著者
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Takahiro Nagata (author) (この著者で検索)
;
Asahiko Matsuda (author) (この著者で検索)
;
Takashi Teramoto (author) (この著者で検索)
https://orcid.org/0000-0002-9368-1284
(unauthenticated)
;
Dominic Gerlach (author) (この著者で検索)
https://orcid.org/0000-0003-1859-0750
(unauthenticated)
;
Peng Shen (author) (この著者で検索)
https://orcid.org/0000-0002-1971-5490
(unauthenticated)
;
Shigenori Ueda (author) (この著者で検索)
;
Takako Kimura (author) (この著者で検索)
https://orcid.org/0009-0007-0109-4482
(unauthenticated)
;
Christian Dussarrat (author) (この著者で検索)
https://orcid.org/0009-0000-1063-6473
(unauthenticated)
;
Toyohiro Chikyow (author) (この著者で検索)
- キーワード
- gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination
- 刊行年月日
- 2025-03-07
- 更新時刻
- 2025-03-26 17:26:31 +0900
Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation
- ジャーナル論文
- 著者
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Akira Uedono (author) (この著者で検索)
https://orcid.org/0000-0001-6224-4869
(unauthenticated)
;
Ryo Tanaka (author) (この著者で検索)
https://orcid.org/0000-0002-4058-7649
(unauthenticated)
;
Shinya Takashima (author) (この著者で検索)
https://orcid.org/0000-0002-3212-4521
(unauthenticated)
;
;Katsunori Ueno (author) (この著者で検索);Masaharu Edo (author) (この著者で検索)Kohei Shima (author) (この著者で検索)
https://orcid.org/0000-0003-0967-141X
(unauthenticated)
;
Shigefusa F. Chichibu (author) (この著者で検索)
https://orcid.org/0000-0001-9558-1642
(unauthenticated)
;
Jun Uzuhashi (author) (この著者で検索)
;
Tadakatsu Ohkubo (author) (この著者で検索)
;
Shoji Ishibashi (author) (この著者で検索)
https://orcid.org/0000-0002-4896-3530
(unauthenticated)
;
Kacper Sierakowski (author) (この著者で検索)
https://orcid.org/0000-0002-9447-1182
(unauthenticated)
;
Michal Bockowski (author) (この著者で検索)
https://orcid.org/0000-0003-1616-685X
(unauthenticated)
- キーワード
- gallium nitride
- 刊行年月日
- 2024-02-29
- 更新時刻
- 2025-03-01 12:30:45 +0900