キーワード: GaN
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5 件のレコードが見つかりました。

Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_085003.pdf
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
ジャーナル論文
著者
Yoshihiro Irokawa (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Toshihide Nabatame (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Tomomi Sawada (author) (この著者で検索)
National Institute for Materials Science
;
Manami Miyamoto (author) (この著者で検索)
;
Hiromi Miura (author) (この著者で検索)
;
Kazuhito Tsukagoshi (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Yasuo Koide (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
GaN
刊行年月日
2024-08-01
更新時刻
2024-09-02 12:30:27 +0900
Irokawa_2026_ECS_J._Solid_State_Sci._Technol._15_055002.pdf
Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces
ジャーナル論文
著者
ORCID SAMURAI ;
Mamoru Usami (author) (この著者で検索)
ORCID ; ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI
キーワード
GaN
刊行年月日
2026-05-01
更新時刻
2026-05-13 10:14:20 +0900
Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_045002.pdf
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
ジャーナル論文
著者
色川 芳宏 (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI ;
大井 暁彦 (author) (この著者で検索)
National Institute for Materials Science Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit
ORCID SAMURAI ;
生田目 俊秀 (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group
ORCID SAMURAI ;
小出 康夫 (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI
キーワード
GaN, hydrogen, Schottky barrier height
刊行年月日
2024-04-01
更新時刻
2024-04-10 16:30:21 +0900
1-s2.0-S1369800125003439-main.pdf
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
ジャーナル論文
著者
Masahiro Hara (author) (この著者で検索)
ORCID ; ORCID SAMURAI ; ORCID SAMURAI ;
Tomomi Sawada (author) (この著者で検索)
;
Manami Miyamoto (author) (この著者で検索)
;
Hiromi Miura (author) (この著者で検索)
;
Tsunenobu Kimoto (author) (この著者で検索)
;
Yasuo Koide (author) (この著者で検索)
キーワード
GaN
刊行年月日
2025-05-07
更新時刻
2025-05-08 12:30:16 +0900
095304_1_5.0224068.pdf
Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
ジャーナル論文
著者
ORCID SAMURAI ; ORCID SAMURAI ;
Takashi Teramoto (author) (この著者で検索)
ORCID ;
Dominic Gerlach (author) (この著者で検索)
ORCID ;
Peng Shen (author) (この著者で検索)
ORCID ; ORCID SAMURAI ;
Takako Kimura (author) (この著者で検索)
ORCID ;
Christian Dussarrat (author) (この著者で検索)
ORCID ; ORCID SAMURAI
キーワード
gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination
刊行年月日
2025-03-07
更新時刻
2025-03-26 17:26:31 +0900