キーワード: gallium nitride

6 件のレコードが見つかりました。

095304_1_5.0224068.pdf
Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
ジャーナル論文
著者
ORCID SAMURAI ; ORCID SAMURAI ;
Takashi Teramoto (author) (この著者で検索)
ORCID ;
Dominic Gerlach (author) (この著者で検索)
ORCID ;
Peng Shen (author) (この著者で検索)
ORCID ; ORCID SAMURAI ;
Takako Kimura (author) (この著者で検索)
ORCID ;
Christian Dussarrat (author) (この著者で検索)
ORCID ; ORCID SAMURAI
キーワード
gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination
刊行年月日
2025-03-07
更新時刻
2025-03-26 17:26:31 +0900

Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam.pdf
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
ジャーナル論文
著者
Akira Uedono (author) (この著者で検索)
;
Hideki Sakurai (author) (この著者で検索)
;
Jun Uzuhashi (author) (この著者で検索)
ORCID SAMURAI ;
Tetsuo Narita (author) (この著者で検索)
;
Kacper Sierakowski (author) (この著者で検索)
;
Shoji Ishibashi (author) (この著者で検索)
;
Shigefusa F. Chichibu (author) (この著者で検索)
;
Michal Bockowski (author) (この著者で検索)
;
Jun Suda (author) (この著者で検索)
;
Tadakatsu Ohokubo (author) (この著者で検索)
;
Nobuyuki Ikarashi (author) (この著者で検索)
;
Kazuhiro Hono (author) (この著者で検索)
ORCID SAMURAI ;
Tetsu Kachi (author) (この著者で検索)
キーワード
gallium nitride, vacancy, positron
刊行年月日
2023-03-15
更新時刻
2024-01-05 22:12:35 +0900

Atomic-scale observation of native oxides on c- and m-faced GaN surfaces.pdf
Atomic-scale observation of native oxides on c - and m -faced GaN surfaces
ジャーナル論文
著者
ORCID SAMURAI ; ORCID SAMURAI ; ORCID SAMURAI ;
Yasuo Koide (author) (この著者で検索)
; ORCID SAMURAI
キーワード
transmission electron microscopy, gallium nitride
刊行年月日
2026-04-01
更新時刻
2026-04-02 10:10:21 +0900

Physica Rapid Research Ltrs - 2024 - Kano - Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution.pdf
Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN
ジャーナル論文
著者
Emi Kano (author) (この著者で検索)
ORCID ;
Jun Uzuhashi (author) (この著者で検索)
ORCID SAMURAI ;
Koki Kobayashi (author) (この著者で検索)
;
Kosuke Ishikawa (author) (この著者で検索)
;
Kyosuke Sawabe (author) (この著者で検索)
;
Tetsuo Narita (author) (この著者で検索)
;
Kacper Sierakowski (author) (この著者で検索)
;
Michal Bockowski (author) (この著者で検索)
;
Tadakatsu Ohkubo (author) (この著者で検索)
ORCID SAMURAI ;
Tetsu Kachi (author) (この著者で検索)
;
Nobuyuki Ikarashi (author) (この著者で検索)
ORCID
キーワード
gallium nitride, atom probe tomography, transmission electron microscopy
刊行年月日
2024-04-22
更新時刻
2024-09-20 16:30:27 +0900

Acceptor activation of Mg-doped GaN – Effects of N2-O2 vs N2 as ambient gas during annealing.pdf
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
ジャーナル論文
著者
Ashutosh Kumar (author) (この著者で検索)
National Institute for Materials Science
ORCID ;
Martin Berg (author) (この著者で検索)
;
Qin Wang (author) (この著者で検索)
;
Jun Uzuhashi (author) (この著者で検索)
ORCID SAMURAI ;
Tadakatsu Ohkubo (author) (この著者で検索)
ORCID SAMURAI ;
Michael Salter (author) (この著者で検索)
;
Peter Ramvall (author) (この著者で検索)
キーワード
gallium nitride, scanning transmission electron microscopy, semiconductor, activation
刊行年月日
2023-07-21
更新時刻
2024-01-05 22:12:15 +0900

Vacancy-type defects and their trapping-detrapping of charge carriers in ion-implanted GaN studied by positron annihilation.pdf
Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation
ジャーナル論文
著者
Akira Uedono (author) (この著者で検索)
ORCID ;
Ryo Tanaka (author) (この著者で検索)
ORCID ;
Shinya Takashima (author) (この著者で検索)
ORCID ;
Katsunori Ueno (author) (この著者で検索)
;
Masaharu Edo (author) (この著者で検索)
;
Kohei Shima (author) (この著者で検索)
ORCID ;
Shigefusa F. Chichibu (author) (この著者で検索)
ORCID ; ORCID SAMURAI ; ORCID SAMURAI ;
Shoji Ishibashi (author) (この著者で検索)
ORCID ;
Kacper Sierakowski (author) (この著者で検索)
ORCID ;
Michal Bockowski (author) (この著者で検索)
ORCID
キーワード
gallium nitride
刊行年月日
2024-02-29
更新時刻
2025-03-01 12:30:45 +0900