Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
- ジャーナル論文
- 著者
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Takahiro Nagata (author) (この著者で検索)
;
Asahiko Matsuda (author) (この著者で検索)
;
Takashi Teramoto (author) (この著者で検索)
https://orcid.org/0000-0002-9368-1284
(unauthenticated)
;
Dominic Gerlach (author) (この著者で検索)
https://orcid.org/0000-0003-1859-0750
(unauthenticated)
;
Peng Shen (author) (この著者で検索)
https://orcid.org/0000-0002-1971-5490
(unauthenticated)
;
Shigenori Ueda (author) (この著者で検索)
;
Takako Kimura (author) (この著者で検索)
https://orcid.org/0009-0007-0109-4482
(unauthenticated)
;
Christian Dussarrat (author) (この著者で検索)
https://orcid.org/0009-0000-1063-6473
(unauthenticated)
;
Toyohiro Chikyow (author) (この著者で検索)
- キーワード
- gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination
- 刊行年月日
- 2025-03-07
- 更新時刻
- 2025-03-26 17:26:31 +0900
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
- ジャーナル論文
- 著者
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Masahiro Hara (author) (この著者で検索)
https://orcid.org/0000-0001-9748-8011
(unauthenticated)
;
Toshihide Nabatame (author) (この著者で検索)
;
Yoshihiro Irokawa (author) (この著者で検索)
;
;Tomomi Sawada (author) (この著者で検索);Manami Miyamoto (author) (この著者で検索);Hiromi Miura (author) (この著者で検索);Tsunenobu Kimoto (author) (この著者で検索)Yasuo Koide (author) (この著者で検索)
- キーワード
- GaN
- 刊行年月日
- 2025-05-07
- 更新時刻
- 2025-05-08 12:30:16 +0900
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
- ジャーナル論文
- 著者
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Yoshihiro Irokawa (author) (この著者で検索)National Institute for Materials Science
;
Toshihide Nabatame (author) (この著者で検索)National Institute for Materials Science
;
;Tomomi Sawada (author) (この著者で検索)National Institute for Materials Science;Manami Miyamoto (author) (この著者で検索);Hiromi Miura (author) (この著者で検索)Kazuhito Tsukagoshi (author) (この著者で検索)National Institute for Materials Science
;
Yasuo Koide (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN
- 刊行年月日
- 2024-08-01
- 更新時刻
- 2024-09-02 12:30:27 +0900
Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control
- ジャーナル論文
- 著者
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Masataka Imura (author) (この著者で検索)National Institute for Materials Science
;
Takanobu Hiroto (author) (この著者で検索)National Institute for Materials Science
;
Takaaki Mano (author) (この著者で検索)National Institute for Materials Science
;
;Yuri Itokazu (author) (この著者で検索)Masafumi Jo (author) (この著者で検索)
- キーワード
- MOVPE, GaN, InN, InGaN, XRD, Superlattice
- 刊行年月日
- 2026-03-21
- 更新時刻
- 2026-04-03 09:31:08 +0900