Reducing vertex radius of curvature for 100 nm size square and triangular holes in GaN by shape modification
- ジャーナル論文
- 著者
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;Kohei Tuzuku (author) (この著者で検索)Masataka Imura (author) (この著者で検索)
;
Hironori Okumura (author) (この著者で検索)
https://orcid.org/0000-0002-5464-9169
(unauthenticated)
- キーワード
- GaN, EB lithography
- 刊行年月日
- 2025-06-01
- 更新時刻
- 2025-12-26 10:20:58 +0900
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
- ジャーナル論文
- 著者
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;Hironori Okumura (author) (この著者で検索);Yohei Ogawara (author) (この著者で検索);Manabu Togawa (author) (この著者で検索);Masaya Miyahara (author) (この著者で検索);Tadaaki Isobe (author) (この著者で検索);Kosuke Itabashi (author) (この著者で検索);Jiro Nishinaga (author) (この著者で検索)Masataka Imura (author) (この著者で検索)National Institute for Materials Science
- キーワード
- Schottky barrier diode, MOCVD, Vertical-type PN junction diode, Proton, Xe, Radiation irradiations, GaN
- 刊行年月日
- 2023-06-01
- 更新時刻
- 2024-08-24 08:30:18 +0900
Stable structures of (VGaVN) n defects in bulk GaN
- ジャーナル論文
- 著者
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Hiroyuki Ishihara (author) (この著者で検索)
https://orcid.org/0009-0002-5824-430X
(unauthenticated)
;
Masato Oda (author) (この著者で検索)
https://orcid.org/0000-0002-8731-5122
(unauthenticated)
;
Tsuyoshi Miyazaki (author) (この著者で検索)
- キーワード
- GaN, First-principles calculations, Large-scale DFT, Vacancy, Defects
- 刊行年月日
- 2026-08-24
- 更新時刻
- 2026-08-26 10:56:41 +0900
First-principles lattice thermal conductivity calculation for GaN / F-43m (216) / materials id 830
- データセット
- コレクション
- MDR lattice thermal conductivity calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials
- キーワード
- Lattice thermal conductivity, GaN
- 刊行年月日
- 更新時刻
- 2026-01-24 12:32:02 +0900
First-principles lattice thermal conductivity calculation for GaN / P6_3mc (186) / materials id 804
- データセット
- コレクション
- MDR lattice thermal conductivity calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials
- キーワード
- Lattice thermal conductivity, GaN
- 刊行年月日
- 更新時刻
- 2026-01-24 15:02:16 +0900
Pt/GaN Schottky barrier height lowering by incorporated hydrogen
- ジャーナル論文
- 著者
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色川 芳宏 (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
;
大井 暁彦 (author) (この著者で検索)National Institute for Materials Science Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Nanofabrication Unit
;
生田目 俊秀 (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Thin Film Electronics Group
;
小出 康夫 (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
- キーワード
- GaN, hydrogen, Schottky barrier height
- 刊行年月日
- 2024-04-01
- 更新時刻
- 2024-04-10 16:30:21 +0900
Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface
- ジャーナル論文
- 著者
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Kongping Wu (author) (この著者で検索)
https://orcid.org/0000-0001-5672-7610
(unauthenticated)
;
;Renxiang Cheng (author) (この著者で検索);Leng Zhang (author) (この著者で検索);Wenxiu Wang (author) (この著者で検索);Fangzhen Li (author) (この著者で検索)Meiyong Liao (author) (この著者で検索)
- キーワード
- diamond, heat spreader, GaN, calculation
- 刊行年月日
- 2024-12-19
- 更新時刻
- 2025-04-22 08:30:20 +0900
Ab-initio phonon calculation for GaN / F-43m (216) / materials id 830
- データセット
- コレクション
- MDR phonon calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science MaDIS
- キーワード
- Phonon, GaN, F-43m (216)
- 刊行年月日
- 更新時刻
- 2023-05-14 19:05:25 +0900
Ab-initio phonon calculation for GaN / P6_3mc (186) / materials id 804
- データセット
- コレクション
- MDR phonon calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science MaDIS
- キーワード
- Phonon, GaN, P6_3mc (186)
- 刊行年月日
- 更新時刻
- 2023-05-14 19:03:39 +0900
Continuous real-time O 1s core XPS spectra of initial O2 molecule adsorption on polar and m-plane surfaces of GaN
- データセット
- 著者
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SUMIYA, Masatomo (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, Gallium nitride, Oxidation, Adsorption, XPS, SPring-8
- 刊行年月日
- 2020-11-19
- 更新時刻
- 2024-01-05 22:13:22 +0900