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論文(25)
キーワード
hexagonal boron nitride (25)
Atomically-precise nanopores (1)
Charge transport (1)
Crossbar array (1)
Defect centers (1)
Electrochemistry (1)
Electrolyte gating (1)
Epitaxial growth (1)
Field-effect transistors (1)
Fluorescence spectra (1)
(more)
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Creative Commons BY Attribution 4.0 International (18)
In Copyright (3)
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International (2)
Creative Commons BY-NC Attribution-NonCommercial 4.0 International (1)
http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (1)
ファイル種別
application/pdf (25)
資源タイプ: journal_article
キーワード: hexagonal boron nitride
全ての絞り込みを解除
25 件のレコードが見つかりました。
Optical control of multiple resistance levels in graphene for memristic applications
論文
著者
Harsimran Kaur Mann ; Mainak Mondal ; Vivek Sah ;
Kenji Watanabe
;
Takashi Taniguchi
;
Akshay Singh
;
Aveek Bid
キーワード
Neuromorphic computing
,
memristors
,
hexagonal boron nitride
刊行年月日
2024-10-29
更新時刻
2025-02-06 12:30:34 +0900
Charge Transfer-Induced Weakening of Vibronic Coupling for Single Terrylene Molecules Adsorbed onto Hexagonal Boron Nitride
論文
著者
Titus de Haas
;
Robert Smit
;
Arash Tebyani
;
Semonti Bhattacharyya
;
Kenji Watanabe
;
Takashi Taniguchi
;
Francesco Buda
;
Michel Orrit
キーワード
Fluorescence spectra
,
terrylene molecules
,
hexagonal boron nitride
刊行年月日
2025-01-09
更新時刻
2025-02-05 12:30:08 +0900
Systematic characterization of nanoscale
h
-BN quantum sensor spots created by helium-ion microscopy
論文
著者
Hao Gu ;
Moeta Tsukamoto
;
Yuki Nakamura
;
Shu Nakaharai
;
Takuya Iwasaki
;
Kenji Watanabe
;
Takashi Taniguchi
; Shinichi Ogawa ; Yukinori Morita ;
Kento Sasaki
;
Kensuke Kobayashi
キーワード
quantum sensor
,
hexagonal boron nitride
,
helium ion microscopy
刊行年月日
2024-11-12
更新時刻
2025-01-09 16:30:55 +0900
Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator
論文
著者
Yosuke Sasama
;
Takuya Iwasaki
;
Mohammad Monish
;
Kenji Watanabe
;
Takashi Taniguchi
;
Yamaguchi Takahide
キーワード
Hydrogen-terminated diamond
,
Field-effect transistors
,
hexagonal boron nitride
,
Self-aligned gate electrode
刊行年月日
2024-08-26
更新時刻
2024-09-12 16:30:45 +0900
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
論文
著者
Takuya Iwasaki
; Yoshifumi Morita ;
Kenji Watanabe
;
Takashi Taniguchi
キーワード
bilayer graphene
,
hexagonal boron nitride
,
heterostructure
,
valley Hall effect
刊行年月日
2024-02-08
更新時刻
2025-01-10 16:31:45 +0900
キーワード
hexagonal boron nitride
(25)
Atomically-precise nanopores
(1)
Charge transport
(1)
Crossbar array
(1)
Defect centers
(1)
Electrochemistry
(1)
Electrolyte gating
(1)
Epitaxial growth
(1)
Field-effect transistors
(1)
Fluorescence spectra
(1)
Hydrogen-terminated diamond
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(1)
Neuromorphic computing
(1)
Phthalocyanine
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Polar crystals
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Self-aligned gate electrode
(1)
Single photon emitters
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Single-layer graphene
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Transition metal dichalcogenides
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bilayer graphene
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carrier density
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diamond
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dynamic nuclear polarization
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electroluminescence
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excitons
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field-effect transistors
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graphene
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heat dissipation
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helium ion microscopy
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many-body effects
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memory cell
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memristors
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molecular beam epitaxy
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optical nonlinearities
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optical phonon excitation
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optically detected magnetic resonance
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organic semiconducting crystals
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photoluminescence
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quantum emitters
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quantum sensor
(1)
quantum wells
(1)
silicon nanowire
(1)
single-photon sources
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terrylene molecules
(1)
transmission electron microscopy
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vacancy
(1)
vacancy-related emitters
(1)
valley Hall effect
(1)
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