Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
- ジャーナル論文
- 著者
-
Shunsuke Yamashita (author) (この著者で検索)
https://orcid.org/0000-0003-1702-1708
(unauthenticated)
;
;Sei Fukushima (author) (この著者で検索)Jun Kikkawa (author) (この著者で検索)National Institute for Materials Science (NIMS) Center for Basic Research on Materials
;
;Ryoji Arai (author) (この著者で検索)Yuya Kanitani (author) (この著者で検索)
https://orcid.org/0009-0002-2154-5571
(unauthenticated)
;
Koji Kimoto (author) (この著者で検索)National Institute for Materials Science (NIMS) Center for Basic Research on Materials
;
Yoshihiro Kudo (author) (この著者で検索) - キーワード
- defect, GaN, EELS, 4D-STEM, HAADF-STEM, ABF-STEM, HAXPES
- 刊行年月日
- 2024-03-01
- 更新時刻
- 2024-03-19 16:56:29 +0900
Ab-initio phonon calculation for GaN / F-43m (216) / materials id 830
- データセット
- コレクション
- MDR phonon calculation database
- 著者
-
Atsushi Togo (author) (この著者で検索)National Institute for Materials Science MaDIS
- キーワード
- Phonon, GaN, F-43m (216)
- 刊行年月日
- 更新時刻
- 2023-05-14 19:05:25 +0900
Ab-initio phonon calculation for GaN / P6_3mc (186) / materials id 804
- データセット
- コレクション
- MDR phonon calculation database
- 著者
-
Atsushi Togo (author) (この著者で検索)National Institute for Materials Science MaDIS
- キーワード
- Phonon, GaN, P6_3mc (186)
- 刊行年月日
- 更新時刻
- 2023-05-14 19:03:39 +0900
Continuous real-time O 1s core XPS spectra of H2O adsorption on +c Ga-face and m-plane surfaces of GaN
- データセット
- 著者
-
SUMIYA, Masatomo (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, Gallium nitride, Surface oxidation, Oxidation, MOS structure, XPS, SPring-8
- 刊行年月日
- 2022-12-31
- 更新時刻
- 2024-01-05 22:11:14 +0900
Continuous real-time O 1s core XPS spectra of initial O2 molecule adsorption on polar and m-plane surfaces of GaN
- データセット
- 著者
-
SUMIYA, Masatomo (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, Gallium nitride, Oxidation, Adsorption, XPS, SPring-8
- 刊行年月日
- 2020-11-19
- 更新時刻
- 2024-01-05 22:13:22 +0900
[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
- 雑誌
- コレクション
- Research Highlights
- 著者
-
International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, MEMS, NEMS, energy storage, temperature coefficient of frequency, AlN, Si, Strain
- 刊行年月日
- 2021-07-13
- 更新時刻
- 2023-12-26 21:38:08 +0900