15 件のレコードが見つかりました。
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
- ジャーナル論文
- 著者
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Yoshihiro Irokawa (author) (この著者で検索)National Institute for Materials Science
;
Toshihide Nabatame (author) (この著者で検索)National Institute for Materials Science
;
;Tomomi Sawada (author) (この著者で検索)National Institute for Materials Science;Manami Miyamoto (author) (この著者で検索);Hiromi Miura (author) (この著者で検索)Kazuhito Tsukagoshi (author) (この著者で検索)National Institute for Materials Science
;
Yasuo Koide (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN
- 刊行年月日
- 2024-08-01
- 更新時刻
- 2024-09-02 12:30:27 +0900
In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
- ジャーナル論文
- 著者
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;Akihiro Shimada (author) (この著者で検索);Haruna Shiomi (author) (この著者で検索)Tetsuya Tohei (author) (この著者で検索)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Yusuke Hayashi (author) (この著者で検索)
;
;Masaya Yamaguchi (author) (この著者で検索)Junpei Yamamoto (author) (この著者で検索)
https://orcid.org/0009-0007-5684-0569
(unauthenticated)
;
Takeaki Hamachi (author) (この著者で検索)
https://orcid.org/0000-0002-0631-1729
(unauthenticated)
;
Yasuhiko Imai (author) (この著者で検索)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
;Kazushi Sumitani (author) (この著者で検索)Shigeru Kimura (author) (この著者で検索)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
Shota Kaneki (author) (この著者で検索)
https://orcid.org/0000-0003-0806-8571
(unauthenticated)
;
Tamotsu Hashizume (author) (この著者で検索)
https://orcid.org/0009-0004-8229-9460
(unauthenticated)
;
Akira Sakai (author) (この著者で検索)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- キーワード
- GaN, HEMT, Strain, In situ
- 刊行年月日
- 2025-08-21
- 更新時刻
- 2025-08-23 08:30:23 +0900
Classification for transmission electron microscope images from different amorphous states using persistent homology
- ジャーナル論文
- 著者
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Fumihiko Uesugi (author) (この著者で検索)National Institute for Materials Science
;
Masashi Ishii (author) (この著者で検索)National Institute for Materials Science
- キーワード
- TEM image simulation, GaN, persistent homology, Amorphous structure
- 刊行年月日
- 2022-06-06
- 更新時刻
- 2024-07-04 16:32:11 +0900
[Research Highlights Vol.68] New GaN MEMS Resonator Is Temperature-Stable up to 600 K
- 雑誌
- コレクション
- Research Highlights
- 著者
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International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (この著者で検索)National Institute for Materials Science
- キーワード
- GaN, MEMS, NEMS, energy storage, temperature coefficient of frequency, AlN, Si, Strain
- 刊行年月日
- 2021-07-13
- 更新時刻
- 2023-12-26 21:38:08 +0900
First-principles lattice thermal conductivity calculation for GaN / F-43m (216) / materials id 830
- データセット
- コレクション
- MDR lattice thermal conductivity calculation database
- 著者
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Atsushi Togo (author) (この著者で検索)National Institute for Materials Science Center for Basic Research on Materials
- キーワード
- Lattice thermal conductivity, GaN
- 刊行年月日
- 更新時刻
- 2026-01-24 12:32:02 +0900