4 records found.
Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 μm
- Journal article
- Creator
-
Neul Ha (author) (Search by this author)National Institute for Materials Science
;
Takaaki Mano (author) (Search by this author)National Institute for Materials Science
;
;Samuel Dubos (author) (Search by this author)Takashi Kuroda (author) (Search by this author)National Institute for Materials Science
;
Yoshiki Sakuma (author) (Search by this author)National Institute for Materials Science
;
Kazuaki Sakoda (author) (Search by this author)National Institute for Materials Science
- Keyword
- InAs, Quantum Dot, Droplet Epitaxy, Single photon, (111)A, Fine Structure Splitting, Telecommunication
- Date published
- 2020-02-01
- Updated at
- 2025-12-06 12:30:07 +0900
Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A
- Journal article
- Creator
-
;Neul Ha (author) (Search by this author);Xiangming Liu (author) (Search by this author)Takaaki Mano (author) (Search by this author)
;
Takashi Kuroda (author) (Search by this author)
;
Kazutaka Mitsuishi (author) (Search by this author)
;
;Andrea Castellano (author) (Search by this author);Stefano Sanguinetti (author) (Search by this author)Takeshi Noda (author) (Search by this author)
;
Yoshiki Sakuma (author) (Search by this author)
;
Kazuaki Sakoda (author) (Search by this author)
- Keyword
- InAs, Quantum Dot, Droplet Epitaxy, Entanglement, (111)A, Fine Structure Splitting, Telecommunication
- Date published
- 2014-04-07
- Updated at
- 2025-12-06 12:30:12 +0900
Lattice‐Mismatched Epitaxy of InAs on (111)A‐Oriented Substrate: Metamorphic Layer Growth and Self‐Assembly of Quantum Dots
- Journal article
- Creator
-
Takaaki Mano (author) (Search by this author)
;
Akihiro Ohtake (author) (Search by this author)
;
Takashi Kuroda (author) (Search by this author)
- Keyword
- GaAs, InAs, (111)A, metamorphic, Quantum dot, Molecular beam epitaxy
- Date published
- 2024-01-10
- Updated at
- 2024-07-12 16:30:19 +0900
Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers
- Journal article
- Creator
-
Akihiro Ohtake (author) (Search by this author)
;
Takaaki Mano (author) (Search by this author)
- Keyword
- InSb, InAs, GaAs, Metamorphic, Molecular beam epitaxy
- Date published
- 2024-03-01
- Updated at
- 2024-02-13 11:12:35 +0900