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Resource type
Article(26)
Keyword
Ga2O3 (26)
HVPE (4)
TMAH (3)
dislocation (3)
ELO (2)
HCl gas etching (2)
Superlattice (2)
etching (2)
selective area growth (2)
(-102) (1)
(more)
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Creative Commons BY Attribution 4.0 International (12)
Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International (7)
In Copyright (6)
Creative Commons BY-NC Attribution-NonCommercial 4.0 International (1)
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application/pdf (20)
application/vnd.openxmlformats-officedocument.wordprocessingml.document (7)
Resource type: journal_article
Keyword: Ga2O3
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26 records found.
Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles
Article
Creator
Takayoshi Oshima
Keyword
Ga2O3
,
TMAH
Date published
2026-02-01
Updated at
2026-02-25 12:30:03 +0900
Halide vapor phase epitaxy of a thick
c
-plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
Article
Creator
Yuichi Oshima
;
Takayoshi Oshima
;
Shiyu Xiao
; Kazuto Murakami ; Katsuhiro Imai ; Takahiro Tomita
Keyword
Ga2O3
,
HVPE
,
Cr2O3
Date published
2026-02-21
Updated at
2026-02-18 16:30:15 +0900
Mapping primary crystallographic planes in
β
-Ga
2
O
3
based on a pseudo-cubic oxygen sublattice
Article
Creator
Takayoshi Oshima
Keyword
Ga2O3
,
fcc
Date published
2026-02-16
Updated at
2026-02-18 16:30:08 +0900
Rapid homoepitaxial growth of (011) β-Ga
2
O
3
by HCl-based halide vapor phase epitaxy
Article
Creator
Yuichi Oshima
;
Takayoshi Oshima
Keyword
Ga2O3
,
HVPE
Date published
2025-12-31
Updated at
2025-11-28 08:30:04 +0900
Fabrication of
β
-Ga
2
O
3
/air-gap structures on (010)
β
-Ga
2
O
3
by wet etching in tetramethylammonium hydroxide (TMAH)
Article
Creator
Takayoshi Oshima
Keyword
Ga2O3
,
TMAH
,
wet etching
,
MEMS
Date published
2025-11-01
Updated at
2025-11-27 08:30:13 +0900
HCl-gas etching of (001) β-Ga2O3 under oxygen supply
Article
Creator
Yuichi Oshima
;
Takayoshi Oshima
Keyword
Ga2O3
,
etching
,
plasma-free
Date published
2025-12-31
Updated at
2025-09-04 12:30:19 +0900
Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga
2
O
3
Article
Creator
Lewis T. Penman
; Zak M. Johnston ;
Paul R. Edwards
;
Yuichi Oshima
; Clifford McAleese ;
Piero Mazzolini
;
Matteo Bosi
;
Luca Seravalli
; Roberto Fornari ;
Robert W. Martin
;
Fabien C.‐P. Massabuau
Keyword
Ga2O3
Date published
2025-02-12
Updated at
2025-08-18 16:30:52 +0900
Step-and-terrace surface formation on (001)
β
-Ga
2
O
3
by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer
Article
Creator
Takayoshi Oshima
Keyword
Ga2O3
,
TMAH
,
Wet etching
Date published
2025-08-01
Updated at
2025-08-18 16:30:36 +0900
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
Article
Creator
Yuichi Oshima
; Takashi Shinohe
Keyword
Ga2O3
,
dislocation
,
HVPE
,
ELO
Date published
2025-05-19
Updated at
2025-05-21 16:30:09 +0900
Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching
Article
Creator
Takayoshi Oshima
;
Yuichi Oshima
Keyword
Ga2O3
,
HCl gas etching
,
air bridge
Date published
2025-05-01
Updated at
2025-05-07 12:30:22 +0900
Keyword
Ga2O3
(26)
HVPE
(4)
TMAH
(3)
dislocation
(3)
ELO
(2)
HCl gas etching
(2)
Superlattice
(2)
etching
(2)
selective area growth
(2)
(-102)
(1)
(011)
(1)
Cr2O3
(1)
HCl
(1)
MEMS
(1)
NiO
(1)
Transistor
(1)
Wet etching
(1)
air bridge
(1)
anisotropic etching
(1)
b-Ga2O3
(1)
crystallographic etching
(1)
dopant
(1)
epitaxial relationship
(1)
epitaxy
(1)
fcc
(1)
forming gas
(1)
lithography
(1)
plasma-free
(1)
plasma-free process
(1)
power device
(1)
selective area etching
(1)
wet etching
(1)
κ-Ga2O3
(1)
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