Epitaxial lateral overgrowth of m -plane α-Ga 2 O 3 by halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takashi Shinohe (author) (Search by this author)
https://orcid.org/0009-0000-5559-1432
(unauthenticated)
- Keyword
- Ga2O3, dislocation, ELO, HVPE
- Date published
- 2025-12-31
- Updated at
- 2025-04-23 12:30:12 +0900
Phase-controlled epitaxial lateral overgrowth of α-Ga2O3 by halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
;Katsuaki Kawara (author) (Search by this author);Takayoshi Oshima (author) (Search by this author);Mitsuru Okigawa (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- α-Ga2O3, ELO, HVPE
- Date published
- 2020-02-01
- Updated at
- 2024-01-22 09:41:33 +0900
Epitaxial lateral overgrowth of r-plane α-Ga2O3 with stripe masks along -12-10>
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Shingo Yagyu (author) (Search by this author)Takashi Shinohe (author) (Search by this author)
- Keyword
- α-Ga2O3, HVPE, dislocation, ELO
- Date published
- 2021-11-07
- Updated at
- 2024-01-30 16:49:49 +0900