HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga 2 O 3
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, (−112), HVPE, HCl gas etching
- Date published
- 2026-12-31
- Updated at
- 2026-07-16 10:12:49 +0900
Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Rie Togashi (author) (Search by this author)
https://orcid.org/0000-0002-9467-0755
(unauthenticated)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, forming gas, anisotropic etching, plasma-free process
- Date published
- 2024-12-31
- Updated at
- 2024-07-31 12:30:20 +0900
Fabrication of β -Ga 2 O 3 /air-gap structures on (010) β -Ga 2 O 3 by wet etching in tetramethylammonium hydroxide (TMAH)
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, TMAH, wet etching, MEMS
- Date published
- 2025-11-01
- Updated at
- 2025-11-27 08:30:13 +0900
First-principles lattice thermal conductivity calculation for Ga2O3 / C2/m (12) / materials id 886
- Dataset
- Collection
- MDR lattice thermal conductivity calculation database
- Creator
-
Atsushi Togo (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science
- Keyword
- Lattice thermal conductivity, Ga2O3
- Date published
- Updated at
- 2026-01-24 14:36:41 +0900
First-principles lattice thermal conductivity calculation for Ga2O3 / R-3c (167) / materials id 1243
- Dataset
- Collection
- MDR lattice thermal conductivity calculation database
- Creator
-
Atsushi Togo (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science
- Keyword
- Lattice thermal conductivity, Ga2O3
- Date published
- Updated at
- 2026-01-24 12:32:36 +0900
Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, HCl gas etching, air bridge
- Date published
- 2025-05-01
- Updated at
- 2025-05-07 12:30:22 +0900
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
;
Shiyu Xiao (author) (Search by this author)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (Search by this author);Katsuhiro Imai (author) (Search by this author)Takahiro Tomita (author) (Search by this author)
- Keyword
- Ga2O3, HVPE, Cr2O3
- Date published
- 2026-02-21
- Updated at
- 2026-02-18 16:30:15 +0900
Rapid homoepitaxial growth of (011) β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, HVPE
- Date published
- 2025-12-31
- Updated at
- 2025-11-28 08:30:04 +0900