First-principles lattice thermal conductivity calculation for Ga2O3 / C2/m (12) / materials id 886
- Dataset
- Collection
- MDR lattice thermal conductivity calculation database
- Creator
-
Atsushi Togo (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science
- Keyword
- Lattice thermal conductivity, Ga2O3
- Date published
- Updated at
- 2026-01-24 14:36:41 +0900
First-principles lattice thermal conductivity calculation for Ga2O3 / R-3c (167) / materials id 1243
- Dataset
- Collection
- MDR lattice thermal conductivity calculation database
- Creator
-
Atsushi Togo (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science
- Keyword
- Lattice thermal conductivity, Ga2O3
- Date published
- Updated at
- 2026-01-24 12:32:36 +0900
(110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown β- Ga 2 O 3 homoepitaxial layers on (011) substrates
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, (011), AFM, TEM
- Date published
- 2026-07-15
- Updated at
- 2026-07-09 10:29:39 +0900
Rapid homoepitaxial growth of (011) β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, HVPE
- Date published
- 2025-12-31
- Updated at
- 2025-11-28 08:30:04 +0900
Ab-initio phonon calculation for Ga2O3 / C2/m (12) / materials id 886
- Dataset
- Collection
- MDR phonon calculation database
- Creator
-
Atsushi Togo (author) (Search by this author)MaDIS, National Institute for Materials Science
- Keyword
- Phonon, Ga2O3, C2/m (12)
- Date published
- Updated at
- 2023-05-14 18:54:18 +0900
Ab-initio phonon calculation for Ga2O3 / R-3c (167) / materials id 1243
- Dataset
- Collection
- MDR phonon calculation database
- Creator
-
Atsushi Togo (author) (Search by this author)MaDIS, National Institute for Materials Science
- Keyword
- Phonon, Ga2O3, R-3c (167)
- Date published
- Updated at
- 2023-05-14 18:35:31 +0900
Lattice-matched (Al x Sc y Ga1− x − y )2O3/ β -Ga2O3 heterostructures with widely tunable bandgap
- Journal article
- Creator
-
Kazuki Koreishi (author) (Search by this author)
https://orcid.org/0009-0000-1580-8262
(unauthenticated)
;
Kodai Niitsu (author) (Search by this author)
;
Takuto Soma (author) (Search by this author)
https://orcid.org/0000-0001-8685-9606
(unauthenticated)
;
Kohei Yoshimatsu (author) (Search by this author)
https://orcid.org/0000-0001-9288-068X
(unauthenticated)
;
Akira Ohtomo (author) (Search by this author)
https://orcid.org/0000-0003-0300-4712
(unauthenticated)
- Keyword
- Ga2O3, Wide bandgap, Bandgap engineering
- Date published
- 2026-07-06
- Updated at
- 2026-08-06 09:39:59 +0900
α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Yuji Kato (author) (Search by this author)Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
Yoshiko Nakayama (author) (Search by this author)National Institute for Materials Science
;
Masaki Takeguchi (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, Superlattice
- Date published
- 2018-06-01
- Updated at
- 2024-01-05 22:12:13 +0900
Luminescence properties of dislocations in α-Ga2O3
- Journal article
- Creator
-
Mugove Maruzane (author) (Search by this author)
https://orcid.org/0009-0004-9207-0424
(unauthenticated)
;
Yuichi Oshima (author) (Search by this author)
;
Olha Makydonska (author) (Search by this author)
https://orcid.org/0009-0008-5562-2137
(unauthenticated)
;
Paul R Edwards (author) (Search by this author)
https://orcid.org/0000-0001-7671-7698
(unauthenticated)
;
Robert W Martin (author) (Search by this author)
https://orcid.org/0000-0002-6119-764X
(unauthenticated)
;
Fabien C-P Massabuau (author) (Search by this author)
https://orcid.org/0000-0003-1008-1652
(unauthenticated)
- Keyword
- Ga2O3, dislocation
- Date published
- 2025-01-20
- Updated at
- 2024-11-13 08:31:40 +0900
Epitaxial relationship of NiO on (-102) β-Ga2O3
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
;
Shinji Nakagomi (author) (Search by this author)Faculty of Science and Engineering, Ishinomaki Senshu University
- Keyword
- Ga2O3, NiO, epitaxial relationship
- Date published
- 2023-12-01
- Updated at
- 2024-11-23 16:30:35 +0900