MOCVD‐Grown MoS ₂ Wafers as a Transfer‐Free Platform for Top‐Gate Devices via Dry Interface Engineering

Journal article

Creator

Shuhong Li (author) (Search by this author)

Shuhong Li ;

Juiteng Chang (author) (Search by this author)

Juiteng Chang ;

Keisuke Atsumi (author) (Search by this author)

Keisuke Atsumi ;

Kosei Matsumoto (author) (Search by this author)

Kosei Matsumoto ;

Itsuki Tanaka (author) (Search by this author)

Itsuki Tanaka ;

Tomonori Nishimura (author) (Search by this author)

Tomonori Nishimura ;

Kaito Kanahashi (author) (Search by this author)

Kaito Kanahashi ;

Takahiro Nagata (author) (Search by this author)

https://orcid.org/0000-0002-8591-2943

NIMS Researchers Directory SAMURAI

Takahiro Nagata ;

Jun Nara (author) (Search by this author)

Jun Nara ;

Yoshiki Sakuma (author) (Search by this author)

Yoshiki Sakuma ;

Emi Kano (author) (Search by this author)

Emi Kano ;

Nobuyuki Ikarashi (author) (Search by this author)

Nobuyuki Ikarashi ;

Kosuke Nagashio (author) (Search by this author)

https://orcid.org/0000-0003-1181-8644 (unauthenticated)

Kosuke Nagashio

Keyword

MOCVD-grownMoS2wafers, interfacialchargetransfer, transfer-freedevicefabrication, top-gatefield-effecttransistors, wafer-scale2Dsemiconductors

Date published

2026-07-05

Updated at

2026-07-29 09:15:47 +0900