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Journal article(4)
Conference paper(1)
Keyword
gallium nitride (5)
atom probe tomography (2)
transmission electron microscopy (2)
activation (1)
scanning transmission electron microscopy (1)
semiconductor (1)
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Creative Commons BY Attribution 4.0 International (3)
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application/pdf (5)
Keyword: gallium nitride
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Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
Conference paper
Creator
Ryo Tanaka
(author) (
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Fuji Electric Co., Ltd.
Ryo Tanaka
;
Shinya Takashima
(author) (
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)
Fuji Electric Co., Ltd.
Shinya Takashima
;
Katsunori Ueno
(author) (
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)
Fuji Electric Co., Ltd.
Katsunori Ueno
;
Masahiro Horita
(author) (
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)
Nagoya Univ.
Masahiro Horita
;
Jun Suda
(author) (
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)
Nagoya Univ.
Jun Suda
;
Jun Uzuhashi
(author) (
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)
https://orcid.org/0000-0003-2023-8158
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Jun Uzuhashi
;
Tadakatsu Ohkubo
(author) (
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https://orcid.org/0000-0003-3548-1951
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Tadakatsu Ohkubo
;
Masaharu Edo
(author) (
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)
Fuji Electric Co., Ltd.
Masaharu Edo
Keyword
gallium nitride
,
atom probe tomography
,
transmission electron microscopy
Date published
2023-06-08
Updated at
2024-04-19 12:30:23 +0900
Atomic-scale observation of native oxides on
c
- and
m
-faced GaN surfaces
Journal article
Creator
Jun Uzuhashi
(author) (
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)
https://orcid.org/0000-0003-2023-8158
NIMS Researchers Directory SAMURAI
Jun Uzuhashi
;
Yoshihiro Irokawa
(author) (
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)
https://orcid.org/0000-0002-6531-4356
NIMS Researchers Directory SAMURAI
Yoshihiro Irokawa
;
Toshihide Nabatame
(author) (
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https://orcid.org/0000-0002-5973-0230
NIMS Researchers Directory SAMURAI
Toshihide Nabatame
;
Yasuo Koide
(author) (
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)
Yasuo Koide
;
Tadakatsu Ohkubo
(author) (
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)
https://orcid.org/0000-0003-3548-1951
NIMS Researchers Directory SAMURAI
Tadakatsu Ohkubo
Keyword
transmission electron microscopy
,
gallium nitride
Date published
2026-04-01
Updated at
2026-04-02 10:10:21 +0900
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
Journal article
Creator
Ashutosh Kumar
(author) (
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https://orcid.org/0000-0002-8085-1598
(unauthenticated)
National Institute for Materials Science
Ashutosh Kumar
;
Martin Berg
(author) (
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)
Martin Berg
;
Qin Wang
(author) (
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)
Qin Wang
;
Jun Uzuhashi
(author) (
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)
https://orcid.org/0000-0003-2023-8158
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Jun Uzuhashi
;
Tadakatsu Ohkubo
(author) (
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)
https://orcid.org/0000-0003-3548-1951
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Tadakatsu Ohkubo
;
Michael Salter
(author) (
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Michael Salter
;
Peter Ramvall
(author) (
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Peter Ramvall
Keyword
gallium nitride
,
scanning transmission electron microscopy
,
semiconductor
,
activation
Date published
2023-07-21
Updated at
2024-01-05 22:12:15 +0900
Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation
Journal article
Creator
Akira Uedono
(author) (
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https://orcid.org/0000-0001-6224-4869
(unauthenticated)
Akira Uedono
;
Ryo Tanaka
(author) (
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)
https://orcid.org/0000-0002-4058-7649
(unauthenticated)
Ryo Tanaka
;
Shinya Takashima
(author) (
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)
https://orcid.org/0000-0002-3212-4521
(unauthenticated)
Shinya Takashima
;
Katsunori Ueno
(author) (
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)
Katsunori Ueno
;
Masaharu Edo
(author) (
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)
Masaharu Edo
;
Kohei Shima
(author) (
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https://orcid.org/0000-0003-0967-141X
(unauthenticated)
Kohei Shima
;
Shigefusa F. Chichibu
(author) (
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https://orcid.org/0000-0001-9558-1642
(unauthenticated)
Shigefusa F. Chichibu
;
Jun Uzuhashi
(author) (
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)
https://orcid.org/0000-0003-2023-8158
NIMS Researchers Directory SAMURAI
Jun Uzuhashi
;
Tadakatsu Ohkubo
(author) (
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)
https://orcid.org/0000-0003-3548-1951
NIMS Researchers Directory SAMURAI
Tadakatsu Ohkubo
;
Shoji Ishibashi
(author) (
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https://orcid.org/0000-0002-4896-3530
(unauthenticated)
Shoji Ishibashi
;
Kacper Sierakowski
(author) (
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https://orcid.org/0000-0002-9447-1182
(unauthenticated)
Kacper Sierakowski
;
Michal Bockowski
(author) (
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https://orcid.org/0000-0003-1616-685X
(unauthenticated)
Michal Bockowski
Keyword
gallium nitride
Date published
2024-02-29
Updated at
2025-03-01 12:30:45 +0900
Electrical activity of Mg clustering at nanoscale defects induced by N ion implantation in GaN
Journal article
Creator
Kosuke Ishikawa
(author) (
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)
Kosuke Ishikawa
;
Emi Kano
(author) (
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)
https://orcid.org/0000-0001-6134-4980
(unauthenticated)
Emi Kano
;
Jun Uzuhashi
(author) (
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)
https://orcid.org/0000-0003-2023-8158
NIMS Researchers Directory SAMURAI
Jun Uzuhashi
;
Kensuke Sumida
(author) (
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)
Kensuke Sumida
;
Tetsuo Narita
(author) (
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https://orcid.org/0000-0002-0849-360X
(unauthenticated)
Tetsuo Narita
;
Masahiro Horita
(author) (
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https://orcid.org/0000-0003-0008-6732
(unauthenticated)
Masahiro Horita
;
Junya Sahashi
(author) (
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Junya Sahashi
;
Shun Lu
(author) (
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https://orcid.org/0000-0002-7342-757X
(unauthenticated)
Shun Lu
;
Jun Suda
(author) (
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)
https://orcid.org/0000-0002-5453-4943
(unauthenticated)
Jun Suda
;
Tadakatsu Ohkubo
(author) (
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)
https://orcid.org/0000-0003-3548-1951
NIMS Researchers Directory SAMURAI
Tadakatsu Ohkubo
;
Tetsu Kachi
(author) (
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)
https://orcid.org/0000-0002-4300-5720
(unauthenticated)
Tetsu Kachi
;
Nobuyuki Ikarashi
(author) (
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https://orcid.org/0000-0002-5575-5780
(unauthenticated)
Nobuyuki Ikarashi
Keyword
gallium nitride
,
atom probe tomography
Date published
2026-06-22
Updated at
2026-06-25 09:46:49 +0900
Keyword
gallium nitride
(5)
atom probe tomography
(2)
transmission electron microscopy
(2)
activation
(1)
scanning transmission electron microscopy
(1)
semiconductor
(1)
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Collection
Resource type
Journal article(4)
Conference paper(1)
Keyword
gallium nitride (5)
atom probe tomography (2)
transmission electron microscopy (2)
activation (1)
scanning transmission electron microscopy (1)
semiconductor (1)
(more)
License
Creative Commons BY Attribution 4.0 International (3)
In Copyright (2)
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application/pdf (5)