Probing thickness-dependent tip-induced band bending in MoS2
- Journal article
- Creator
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;Jian Liao (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
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Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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Jiamin Xue (author) (Search by this author) - Keyword
- Scanning tunneling spectroscopy (STS), Tip-induced band bending (TIBB), MoS2
- Date published
- 2025-03-01
- Updated at
- 2026-07-06 10:34:11 +0900
Direct observation of atomic configuration of a highly oriented MoS2 film/α-Al2O3 (0001) using atomic resolution electron microscopy
- Journal article
- Creator
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;Emi Kano (author) (Search by this author)Nagoya UniversityJun Nara (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Quantum Materials Simulation Group, National Institute for Materials Science
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;Koki Takenaka (author) (Search by this author)Graduate School of Engineering, Nagoya University;Toshiki Yasuno (author) (Search by this author)Graduate School of Engineering, Nagoya University;Keisuke Atsumi (author) (Search by this author)Department of Materials Engineering, The University of Tokyo;Shuhong Shuhong Li (author) (Search by this author)Department of Materials Engineering, The University of Tokyo;Tomonori Nishimura (author) (Search by this author)Department of Materials Engineering, The University of Tokyo;Kaito Kanahashi (author) (Search by this author)Department of Materials Engineering, The University of TokyoJun Uzuhashi (author) (Search by this author)Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Electron Microscopy Unit, National Institute for Materials Science
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;Kosuke Nagashio (author) (Search by this author)Department of Materials Engineering, The University of TokyoYoshiki Sakuma (author) (Search by this author)Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Epitaxial Structures Group, National Institute for Materials Science
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Nobuyuki Ikarashi (author) (Search by this author)Nagoya University - Keyword
- MoS2, sapphire
- Date published
- 2025-12-22
- Updated at
- 2025-12-24 17:24:27 +0900
Enhanced computing performance of MoS2-based Raman-ion-gating reservoir achieved by combining reservoir states from current response and resonant Raman scattering
- Journal article
- Creator
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Yoshitaka Shingaya (author) (Search by this author)National Institute for Materials Science
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Daiki Nishioka (author) (Search by this author)National Institute for Materials Science
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Kazuya Terabe (author) (Search by this author)National Institute for Materials Science
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Takashi Tsuchiya (author) (Search by this author)National Institute for Materials Science
- Keyword
- physical reservoir computing, resonant Raman scattering, MoS2, electric double layer transistor, Raman-ion-gating reservoir
- Date published
- 2025-10-23
- Updated at
- 2025-11-17 12:30:04 +0900
Steep-slope Schottky diode with cold metal source
- Journal article
- Creator
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;Wongil Shin (author) (Search by this author);Gyuho Myeong (author) (Search by this author);Kyunghwan Sung (author) (Search by this author);Seungho Kim (author) (Search by this author);Hongsik Lim (author) (Search by this author);Boram Kim (author) (Search by this author);Taehyeok Jin (author) (Search by this author);Jihoon Park (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
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;Fei Liu (author) (Search by this author)Sungjae Cho (author) (Search by this author)
- Keyword
- Low-power transistors, Schottky diode, MoS2
- Date published
- 2022-06-13
- Updated at
- 2025-02-26 08:30:57 +0900