5 records found.
Vacancy-type defects introduced by mechanical polishing in ammonothermal GaN studied by a monoenergetic positron beam
- Journal article
- Creator
-
Akira Uedono (author) (Search by this author)
https://orcid.org/0000-0001-6224-4869
(unauthenticated)
;
Shoji Ishibashi (author) (Search by this author)
https://orcid.org/0000-0002-4896-3530
(unauthenticated)
;
Kohei Shima (author) (Search by this author)
https://orcid.org/0000-0003-0967-141X
(unauthenticated)
;
;Shigefusa F. Chichibu (author) (Search by this author)Kacper Sierakowski (author) (Search by this author)
https://orcid.org/0000-0002-9447-1182
(unauthenticated)
;
Makoto Oishi (author) (Search by this author)
https://orcid.org/0000-0003-3402-4556
(unauthenticated)
;
Noriyuki Okada (author) (Search by this author)
https://orcid.org/0009-0002-0090-5646
(unauthenticated)
;
Takuro Nagai (author) (Search by this author)
;
Michal Bockowski (author) (Search by this author)
https://orcid.org/0000-0003-1616-685X
(unauthenticated)
- Keyword
- Mechanical polishing, GaN, Vacancy, Defect, Positron annihilation
- Date published
- 2026-04-12
- Updated at
- 2026-04-20 08:56:29 +0900
Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam
- Conference paper
- Creator
-
;Akira Uedono (author) (Search by this author);Ryo Tanaka (author) (Search by this author);Shinya Takashima (author) (Search by this author);Katsunori Ueno (author) (Search by this author);Masaharu Edo (author) (Search by this author);Kohei Shima (author) (Search by this author);Shigefusa F. Chichibu (author) (Search by this author)Jun Uzuhashi (author) (Search by this author)
;
Tadakatsu Ohkubo (author) (Search by this author)
;
;Shoji Ishibashi (author) (Search by this author);Kacper Sierakowski (author) (Search by this author)Michal Bockowski (author) (Search by this author)
- Keyword
- gallium nitride
- Date published
- 2025-06-04
- Updated at
- 2025-09-17 16:30:20 +0900
Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation
- Journal article
- Creator
-
Akira Uedono (author) (Search by this author)
https://orcid.org/0000-0001-6224-4869
(unauthenticated)
;
Ryo Tanaka (author) (Search by this author)
https://orcid.org/0000-0002-4058-7649
(unauthenticated)
;
Shinya Takashima (author) (Search by this author)
https://orcid.org/0000-0002-3212-4521
(unauthenticated)
;
;Katsunori Ueno (author) (Search by this author);Masaharu Edo (author) (Search by this author)Kohei Shima (author) (Search by this author)
https://orcid.org/0000-0003-0967-141X
(unauthenticated)
;
Shigefusa F. Chichibu (author) (Search by this author)
https://orcid.org/0000-0001-9558-1642
(unauthenticated)
;
Jun Uzuhashi (author) (Search by this author)
;
Tadakatsu Ohkubo (author) (Search by this author)
;
Shoji Ishibashi (author) (Search by this author)
https://orcid.org/0000-0002-4896-3530
(unauthenticated)
;
Kacper Sierakowski (author) (Search by this author)
https://orcid.org/0000-0002-9447-1182
(unauthenticated)
;
Michal Bockowski (author) (Search by this author)
https://orcid.org/0000-0003-1616-685X
(unauthenticated)
- Keyword
- gallium nitride
- Date published
- 2024-02-29
- Updated at
- 2025-03-01 12:30:45 +0900
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
- Journal article
- Creator
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;Akira Uedono (author) (Search by this author);Hideki Sakurai (author) (Search by this author)Jun Uzuhashi (author) (Search by this author)National Institute for Materials Science
;
;Tetsuo Narita (author) (Search by this author);Kacper Sierakowski (author) (Search by this author);Shoji Ishibashi (author) (Search by this author);Shigefusa F. Chichibu (author) (Search by this author);Michal Bockowski (author) (Search by this author);Jun Suda (author) (Search by this author);Tadakatsu Ohokubo (author) (Search by this author);Nobuyuki Ikarashi (author) (Search by this author)Kazuhiro Hono (author) (Search by this author)National Institute for Materials Science
;
Tetsu Kachi (author) (Search by this author)
- Keyword
- gallium nitride, vacancy, positron
- Date published
- 2023-03-15
- Updated at
- 2024-01-05 22:12:35 +0900
Impacts of vacancy complexes on the room-temperature photoluminescence lifetime of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
- Journal article
- Creator
-
;Shigefusa F. Chichibu (author) (Search by this author)Institute of Multidisciplinary Research for Advanced Materials, Tohoku University;Kohei Shima (author) (Search by this author)Institute of Multidisciplinary Research for Advanced Materials, Tohoku University;Akira Uedono (author) (Search by this author)Department of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan;Shoji Ishibashi (author) (Search by this author)AIST;Hiroko Iguchi (author) (Search by this author)TOYOTA CENTRAL R&D LABS., INC.;Tetsuo Narita (author) (Search by this author)TOYOTA CENTRAL R&D LABS., INC.;Keita Kataoka (author) (Search by this author)TOYOTA CENTRAL R&D LABS., INC.;Ryo Tanaka (author) (Search by this author)Fuji Electric Corporation;Shinya Takashima (author) (Search by this author)Fuji Electric Corporation;Katsunori Ueno (author) (Search by this author)Fuji Electric Corporation;Masaharu Edo (author) (Search by this author)Fuji Electric Corporation;Hirotaka Watanabe (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Atsushi Tanaka (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Yoshio Honda (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Jun Suda (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Hiroshi Amano (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya University;Tetsu Kachi (author) (Search by this author)Institute of Materials and Systems for Sustainability, Nagoya UniversityToshihide Nabatame (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
;
Yoshihiro Irokawa (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
;
Yasuo Koide (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
- Keyword
- GaN
- Date published
- 2024-05-14
- Updated at
- 2024-05-09 16:30:16 +0900