4 records found.
Interfacial Elemental Analysis of Slanted Edge-Contacted Monolayer MoS2 Transistors via Directionally Angled Etching
- Journal article
- Creator
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;Chia-Chun Lin (author) (Search by this author);Naomi Tabudlong Paylaga (author) (Search by this author);Chun-Chieh Yen (author) (Search by this author);Yu-Hsuan Lin (author) (Search by this author);Kuang-Hsu Wang (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
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;Chi-Te Liang (author) (Search by this author);Shao-Yu Chen (author) (Search by this author)Wei-Hua Wang (author) (Search by this author) - Keyword
- edge contacts , MoS2 transistors , interfacial analysis
- Date published
- 2025-02-04
- Updated at
- 2026-03-10 12:30:24 +0900
Determining the Electron Scattering from Interfacial Coulomb Scatterers in Two-Dimensional Transistors
- Journal article
- Creator
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;Yi-Te Lee (author) (Search by this author);Yu-Ting Huang (author) (Search by this author);Shao-Pin Chiu (author) (Search by this author);Ruey-Tay Wang (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
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Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
;Raman Sankar (author) (Search by this author);Chi-Te Liang (author) (Search by this author);Wei-Hua Wang (author) (Search by this author);Sheng-Shiuan Yeh (author) (Search by this author)Juhn-Jong Lin (author) (Search by this author)
- Keyword
- electron scattering, 2D materials, Coulomb scattering strength, low-frequency noise, indium selenide, interfacial Coulomb scatterers, 2D transist
- Date published
- 2024-01-10
- Updated at
- 2025-10-21 15:50:45 +0900
Effect of capping on the Dirac semimetal Cd3As2 on Si grown via molecular beam epitaxy
- Journal article
- Creator
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;Wei-Chen Lin (author) (Search by this author);Chiashain Chuang (author) (Search by this author);Chun-Wei Kuo (author) (Search by this author);Meng-Ting Wu (author) (Search by this author);Jie-Ying Lee (author) (Search by this author);Hsin-Hsuan Lee (author) (Search by this author);Cheng-Hsueh Yang (author) (Search by this author);Ji-Wei Ci (author) (Search by this author);Tian-Shun Xie (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
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;Nobuyuki Aoki (author) (Search by this author);Jyh-Shyang Wang (author) (Search by this author)Chi-Te Liang (author) (Search by this author)
- Keyword
- Dirac semimetal , Cd3As2 , molecular beam epitaxy (MBE)
- Date published
- 2025-04-21
- Updated at
- 2026-02-17 08:30:37 +0900
Robust fractional quantum Hall effect in the N=2 Landau level in bilayer graphene
- Journal article
- Creator
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;Georgi Diankov (author) (Search by this author);Chi-Te Liang (author) (Search by this author);François Amet (author) (Search by this author);Patrick Gallagher (author) (Search by this author);Menyoung Lee (author) (Search by this author);Andrew J. Bestwick (author) (Search by this author);Kevin Tharratt (author) (Search by this author);William Coniglio (author) (Search by this author);Jan Jaroszynski (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
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Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
David Goldhaber-Gordon (author) (Search by this author)
- Keyword
- Fractional quantum Hall effect, bilayer graphene, electron interactions
- Date published
- 2016-12-21
- Updated at
- 2025-02-27 08:31:18 +0900