Optimizing thermal energy harvesting in few-layer MoS2 with measurements of electron's effective mass in two-dimensional semiconductors
- Journal article
- Creator
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Kuan-Cheng Lu (author) (Search by this author)
https://orcid.org/0009-0003-5351-9949
(unauthenticated)
;
Chetan Awasthi (author) (Search by this author)
https://orcid.org/0000-0002-6027-5095
(unauthenticated)
;
;Ta-Wei Chiu (author) (Search by this author)S. S. Islam (author) (Search by this author)
https://orcid.org/0000-0001-7696-5499
(unauthenticated)
;
Kimitoshi Kono (author) (Search by this author)
https://orcid.org/0000-0002-4446-4419
(unauthenticated)
;
Kazuhito Tsukagoshi (author) (Search by this author)
;
Wen-Bin Jian (author) (Search by this author)
https://orcid.org/0000-0002-1898-9641
(unauthenticated)
- Keyword
- Two-Dimensional Semiconductors, Seebeck Coefficient, MoS2, Mott’s Hopping Transport
- Date published
- 2026-03-01
- Updated at
- 2026-01-14 10:42:17 +0900
Understanding the interplay of defects, oxygen, and strain in 2D materials for next-generation optoelectronics
- Journal article
- Creator
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;Keerthana S Kumar (author) (Search by this author);Ajit Kumar Dash (author) (Search by this author);Hasna Sabreen H (author) (Search by this author);Manvi Verma (author) (Search by this author);Vivek Kumar (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
;Gopalakrishnan Sai Gautam (author) (Search by this author)Akshay Singh (author) (Search by this author)
- Keyword
- MoS2, strain, defects, 2D materials, optical spectroscopy, DFT, oxygen
- Date published
- 2024-10-01
- Updated at
- 2025-08-30 08:30:17 +0900
Enhanced computing performance of MoS2-based Raman-ion-gating reservoir achieved by combining reservoir states from current response and resonant Raman scattering
- Journal article
- Creator
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Yoshitaka Shingaya (author) (Search by this author)National Institute for Materials Science
;
Daiki Nishioka (author) (Search by this author)National Institute for Materials Science
;
Kazuya Terabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Tsuchiya (author) (Search by this author)National Institute for Materials Science
- Keyword
- physical reservoir computing, resonant Raman scattering, MoS2, electric double layer transistor, Raman-ion-gating reservoir
- Date published
- 2025-10-23
- Updated at
- 2025-11-17 12:30:04 +0900
Reliability Challenges in Equivalent-Oxide-Thickness Scaling with High-κ Er2O3 Dielectrics on Two-Dimensional MoS2 Field-Effect Transistors
- Journal article
- Creator
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;Shuhong Li (author) (Search by this author);Ryotaro Otake (author) (Search by this author);Tomonori Nishimura (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Yoshiki Sakuma (author) (Search by this author)National Institute for Materials Science
;
Kosuke Nagashio (author) (Search by this author)
- Keyword
- High-κ dielectric, MoS2, 2D semiconductor
- Date published
- 2025-05-05
- Updated at
- 2026-07-29 11:45:27 +0900