Keerthana S Kumar
;
Ajit Kumar Dash
;
Hasna Sabreen H
;
Manvi Verma
;
Vivek Kumar
;
Kenji Watanabe
(National Institute for Materials Science)
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Gopalakrishnan Sai Gautam
;
Akshay Singh
説明:
(abstract)2D transition metal dichalcogenides (TMDs) are leading materials for next-generation optoelectronics, but fundamental problems stand enroute to commercialization. These problems include firstly, the widely debated defect and strain-induced origins of intense low-energy broad luminescence peaks (L-peak) observed at low temperatures. Secondly, role of oxygen in tuning properties via chemisorption and physisorption is intriguing but challenging to understand. Thirdly, physical understanding of benefits of hBN encapsulation is inadequate. Using a series of samples, we decouple contributions of oxygen, defects, adsorbates, and strain on optical properties of monolayer MoS2. Defect-origin of L-peak is confirmed by temperature and power-dependent photoluminescence (PL) measurements, with a dramatic redshift ~ 130 meV for oxygen-assisted chemical vapour deposition (O-CVD) samples (c.f. exfoliated). Anomalously, O-CVD samples show high A-exciton PL at room temperature (c.f. exfoliated), but reduced PL at low temperatures, attributed to strain-induced direct-to-indirect bandgap-crossover in low-defect O-CVD MoS2. These observations are consistent with our density functional theory calculations, and supported by Raman spectroscopy. In exfoliated samples, charged O-adatoms are identified as thermodynamically favourable defects, and create in-gap states. Beneficial effect of encapsulation originates from reduction of charged O-adatoms and adsorbates. This experimental-theoretical study uncovers the type of defects in each sample, enables an understanding of the combined effect of defects, strain and oxygen on band structure, and enriches understanding of effects of encapsulation. This work proposes O-CVD for creating high-quality materials for optoelectronics.
権利情報:
キーワード: MoS2, strain, defects, 2D materials, optical spectroscopy, DFT, oxygen
刊行年月日: 2024-10-01
出版者: IOP Publishing
掲載誌:
研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI:
公開URL: https://doi.org/10.1088/2053-1583/ad4e44
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-08-30 08:30:17 +0900
MDRでの公開時刻: 2025-08-30 08:17:29 +0900
| ファイル名 | サイズ | |||
|---|---|---|---|---|
| ファイル名 |
2024A00771G_accepted_manuscript.pdf
(サムネイル)
application/pdf |
サイズ | 4.55MB | 詳細 |