論文 Understanding the interplay of defects, oxygen, and strain in 2D materials for next-generation optoelectronics

Keerthana S Kumar ; Ajit Kumar Dash ; Hasna Sabreen H ; Manvi Verma ; Vivek Kumar ; Kenji Watanabe SAMURAI ORCID (National Institute for Materials Science) ; Takashi Taniguchi SAMURAI ORCID (National Institute for Materials Science) ; Gopalakrishnan Sai Gautam ; Akshay Singh

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引用
Keerthana S Kumar, Ajit Kumar Dash, Hasna Sabreen H, Manvi Verma, Vivek Kumar, Kenji Watanabe, Takashi Taniguchi, Gopalakrishnan Sai Gautam, Akshay Singh. Understanding the interplay of defects, oxygen, and strain in 2D materials for next-generation optoelectronics. 2D Materials. 2024, 11 (4), 045003. https://doi.org/10.1088/2053-1583/ad4e44

説明:

(abstract)

2D transition metal dichalcogenides (TMDs) are leading materials for next-generation optoelectronics, but fundamental problems stand enroute to commercialization. These problems include firstly, the widely debated defect and strain-induced origins of intense low-energy broad luminescence peaks (L-peak) observed at low temperatures. Secondly, role of oxygen in tuning properties via chemisorption and physisorption is intriguing but challenging to understand. Thirdly, physical understanding of benefits of hBN encapsulation is inadequate. Using a series of samples, we decouple contributions of oxygen, defects, adsorbates, and strain on optical properties of monolayer MoS2. Defect-origin of L-peak is confirmed by temperature and power-dependent photoluminescence (PL) measurements, with a dramatic redshift ~ 130 meV for oxygen-assisted chemical vapour deposition (O-CVD) samples (c.f. exfoliated). Anomalously, O-CVD samples show high A-exciton PL at room temperature (c.f. exfoliated), but reduced PL at low temperatures, attributed to strain-induced direct-to-indirect bandgap-crossover in low-defect O-CVD MoS2. These observations are consistent with our density functional theory calculations, and supported by Raman spectroscopy. In exfoliated samples, charged O-adatoms are identified as thermodynamically favourable defects, and create in-gap states. Beneficial effect of encapsulation originates from reduction of charged O-adatoms and adsorbates. This experimental-theoretical study uncovers the type of defects in each sample, enables an understanding of the combined effect of defects, strain and oxygen on band structure, and enriches understanding of effects of encapsulation. This work proposes O-CVD for creating high-quality materials for optoelectronics.

権利情報:

キーワード: MoS2, strain, defects, 2D materials, optical spectroscopy, DFT, oxygen

刊行年月日: 2024-10-01

出版者: IOP Publishing

掲載誌:

  • 2D Materials (ISSN: 20531583) vol. 11 issue. 4 p. 45003-45003 045003

研究助成金:

  • Prime Ministers Research Fellowship
  • INSPIRE-DST
  • Science and Engineering Research Board SRG-2020-000133
  • Department of Science and Technology India
  • Ministry of Electronics and Information technology
  • National Supercomputing Mission
  • Japan Society for the Promotion of Science 19H05790

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1088/2053-1583/ad4e44

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更新時刻: 2025-08-30 08:30:17 +0900

MDRでの公開時刻: 2025-08-30 08:17:29 +0900

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