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Progress and challenges in the development of ultra-wide bandgap semiconductor α-Ga2O3 toward realizing power device applications
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
Elaheh Ahmadi (author) (Search by this author) - Keyword
- α-Ga2O3, epitaxy, power device
- Date published
- 2022-12-26
- Updated at
- 2024-01-29 15:45:56 +0900