4 records found.
Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics
- Journal article
- Creator
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Yoshiki Sakuma (author) (Search by this author)National Institute for Materials Science
;
;Keisuke Atsumi (author) (Search by this author)Takanobu Hiroto (author) (Search by this author)National Institute for Materials Science
;
Jun Nara (author) (Search by this author)National Institute for Materials Science
;
Akihiro Ohtake (author) (Search by this author)National Institute for Materials Science
;
;Yuki Ono (author) (Search by this author);Takashi Matsumoto (author) (Search by this author);Yukihiro Muta (author) (Search by this author);Kai Takeda (author) (Search by this author);Emi Kano (author) (Search by this author);Toshiki Yasuno (author) (Search by this author);Xu Yang (author) (Search by this author);Nobuyuki Ikarashi (author) (Search by this author);Asato Suzuki (author) (Search by this author);Michio Ikezawa (author) (Search by this author);Shuhong Li (author) (Search by this author);Tomonori Nishimura (author) (Search by this author);Kaito Kanahashi (author) (Search by this author)Kosuke Nagashio (author) (Search by this author) - Keyword
- MoS2, epitaxial growth, MOCVD
- Date published
- 2026-01-21
- Updated at
- 2026-01-29 16:30:04 +0900
Patternable laser-oxidized Ta2O5 dielectric and TaS2 contact for optimizing subthreshold swing of MoS2 field-effect transistors
- Journal article
- Creator
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;Kuan-Cheng Lu (author) (Search by this author);Pen-Yuan Shih (author) (Search by this author);Pin-Hsien Lin (author) (Search by this author);Shih-Hao Wu (author) (Search by this author);Kimitoshi Kono (author) (Search by this author)Wen-Bin Jian (author) (Search by this author)
https://orcid.org/0000-0002-1898-9641
(unauthenticated)
;
;Yu-Han Lin (author) (Search by this author);Yo-Yao Ho (author) (Search by this author)Ching-Hwa Ho (author) (Search by this author)
https://orcid.org/0000-0002-7195-208X
(unauthenticated)
;
;Shin-Yuan Wang (author) (Search by this author);Chao-Hsin Chien (author) (Search by this author)Ching-Yu Chiang (author) (Search by this author)
https://orcid.org/0000-0002-3640-0474
(unauthenticated)
;
;Shu-Jui Chang (author) (Search by this author);Yu-Che Huang (author) (Search by this author)Kenji Watanabe (author) (Search by this author)
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Takashi Taniguchi (author) (Search by this author)
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Kazuhito Tsukagoshi (author) (Search by this author)
;
Chenming Hu (author) (Search by this author)
https://orcid.org/0000-0003-0836-6296
(unauthenticated)
- Keyword
- Ta2O5, TaS2, subthreshold swing, MoS2, field-effect transistors
- Date published
- 2026-02-24
- Updated at
- 2026-03-04 16:30:07 +0900
Evidence of the Coulomb gap in the density of states of
- Journal article
- Creator
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;Michele Masseroni (author) (Search by this author);Tingyu Qu (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
;Thomas Ihn (author) (Search by this author)Klaus Ensslin (author) (Search by this author)
- Keyword
- MoS2, dual-gated exfoliated bilayer, electron localization
- Date published
- 2023-02-14
- Updated at
- 2025-02-28 12:30:25 +0900
Steep-slope Schottky diode with cold metal source
- Journal article
- Creator
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;Wongil Shin (author) (Search by this author);Gyuho Myeong (author) (Search by this author);Kyunghwan Sung (author) (Search by this author);Seungho Kim (author) (Search by this author);Hongsik Lim (author) (Search by this author);Boram Kim (author) (Search by this author);Taehyeok Jin (author) (Search by this author);Jihoon Park (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
;Fei Liu (author) (Search by this author)Sungjae Cho (author) (Search by this author)
- Keyword
- Low-power transistors, Schottky diode, MoS2
- Date published
- 2022-06-13
- Updated at
- 2025-02-26 08:30:57 +0900