4 records found.
Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0001) substrates by Halide Vapor Phase Epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Encarnaciόn G. Vίllora (author) (Search by this author)
;
Kiyoshi Shimamura (author) (Search by this author)
- Keyword
- β-Ga2O3, heteroepitaxy
- Date published
- 2014-10-28
- Updated at
- 2024-01-22 09:35:42 +0900
Fabrication of β-Ga 2 O 3 /air-gap structures on (001) β-Ga 2 O 3 using HCl gas etching
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- β-Ga2O3, cantilever, air bridge, MEMS
- Date published
- 2025-12-31
- Updated at
- 2025-09-04 12:30:25 +0900
Effect of temperature and HCl partial pressure on the selective area gas etching of (001) β-Ga2O3
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- β-Ga2O3, etching
- Date published
- 2023-08-01
- Updated at
- 2024-08-21 08:30:30 +0900
Homoepitaxial growth of (-102) β-Ga2O3 by halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
;
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- β-Ga2O3, HVPE
- Date published
- 2023-10-01
- Updated at
- 2024-08-31 08:31:17 +0900