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代替タイトル: c面傾斜サファイア基板を用いたb-Ga2O3のHVPE成長

説明:

We demonstrate the high-speed growth of b-Ga2O3 epilayers on off-angled sapphire (0001) substrates by the halide vapor epitaxy. (-201) oriented b-Ga2O3 layers were successfully grown using GaCl and O2 as source gases. The growth rate monotonically increased with increasing the partial pressures of the source gases, reaching over 250 um/h. By the use of off-angled substrates and thick layer overgrowth, almost single-oriented heteroepitaxial growth was achieved.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  © 2014. This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/.

キーワード: β-Ga2O3, heteroepitaxy

刊行年月日: 2014-10-28

出版者: Elsevier BV

掲載誌:

• JOURNAL OF CRYSTAL GROWTH (ISSN: 00220248) vol. 410 p. 53-58

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4351

公開URL: https://doi.org/10.1016/j.jcrysgro.2014.10.038

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更新時刻: 2024-01-22 09:35:42 +0900

MDRでの公開時刻: 2024-01-22 12:30:11 +0900