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β-Ga2O3/air-gap structures were fabricated on (001) substrates via crystallographic
etching with HCl gas. Etching at 650 °C under an HCl partial pressure of 250 Pa resulted
in a vertical etch rate of 0.10 μm/min on the (001) plane and a lateral etch rate of 0.70
μm/min along the <010> direction. This high orthogonal etching anisotropy enabled the
formation of β-Ga2O3/air-gap structures—such as cantilevers and air bridges—without
the need for wafer bonding or transfer processes. This straightforward technique,
compatible with commonly used (001) substrates, holds promise for the integration of β-
Ga2O3-based microelectromechanical systems (MEMS) and power electronic devices.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: β-Ga2O3, cantilever, air bridge, MEMS

刊行年月日: 2025-12-31

出版者: Informa UK Limited

掲載誌:

• Science and Technology of Advanced Materials: Methods (ISSN: 27660400) vol. 5 issue. 1 2554046

研究助成金:

• Japan Society for the Promotion of Science (JSPS), MEXT, Japan JP24K01368

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1080/27660400.2025.2554046

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更新時刻: 2025-09-04 12:30:25 +0900

MDRでの公開時刻: 2025-09-04 12:20:09 +0900