Article Fabrication of β-Ga 2 O 3 /air-gap structures on (001) β-Ga 2 O 3 using HCl gas etching

Takayoshi Oshima SAMURAI ORCID ; Yuichi Oshima SAMURAI ORCID

Fabrication of -Ga2O3 air-gap structures on 001 -Ga2O3 using HCl gas etching.pdf
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Takayoshi Oshima, Yuichi Oshima. Fabrication of β-Ga 2 O 3 /air-gap structures on (001) β-Ga 2 O 3 using HCl gas etching. Science and Technology of Advanced Materials: Methods. 2025, 5 (1), 2554046. https://doi.org/10.1080/27660400.2025.2554046

Description:

(abstract)

β-Ga2O3/air-gap structures were fabricated on (001) substrates via crystallographic
etching with HCl gas. Etching at 650 °C under an HCl partial pressure of 250 Pa resulted
in a vertical etch rate of 0.10 μm/min on the (001) plane and a lateral etch rate of 0.70
μm/min along the <010> direction. This high orthogonal etching anisotropy enabled the
formation of β-Ga2O3/air-gap structures—such as cantilevers and air bridges—without
the need for wafer bonding or transfer processes. This straightforward technique,
compatible with commonly used (001) substrates, holds promise for the integration of β-
Ga2O3-based microelectromechanical systems (MEMS) and power electronic devices.

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Keyword: β-Ga2O3, cantilever, air bridge, MEMS

Date published: 2025-12-31

Publisher: Informa UK Limited

Journal:

  • Science and Technology of Advanced Materials: Methods (ISSN: 27660400) vol. 5 issue. 1 2554046

Funding:

  • Japan Society for the Promotion of Science (JSPS), MEXT, Japan JP24K01368

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1080/27660400.2025.2554046

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Updated at: 2025-09-04 12:30:25 +0900

Published on MDR: 2025-09-04 12:20:09 +0900

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