Temperature- and depth-dependent valence band electronic structures of half-metallic studied by hard x-ray photoemission spectroscopy
- Journal article
- Creator
-
Shigenori Ueda (author) (Search by this author)
;
Yuichi Fujita (author) (Search by this author)
;
Ivan Kurniawan (author) (Search by this author)
;
Yuya Sakuraba (author) (Search by this author)
;
Yoshio Miura (author) (Search by this author)
- Keyword
- Co2MnSi, HAXPES, Temperature dependence, Interface and bulk electronic states, interface and bulk magnetic properties, X-ray polarization dependence
- Date published
- 2026-02-18
- Updated at
- 2026-02-21 08:30:04 +0900
Chemical Interface Structures in CdS/RbInSe2/Cu(In,Ga)Se2 Thin‐Film Solar Cell Stacks
- Journal article
- Creator
-
Jakob Bombsch (author) (Search by this author)
https://orcid.org/0000-0002-0820-162X
(unauthenticated)
;
Tim Kodalle (author) (Search by this author)
https://orcid.org/0000-0002-8792-9669
(unauthenticated)
;
Raul Garcia‐Diez (author) (Search by this author)
https://orcid.org/0009-0000-9374-1083
(unauthenticated)
;
;Claudia Hartmann (author) (Search by this author);Roberto Félix (author) (Search by this author)Shigenori Ueda (author) (Search by this author)
;
Regan G. Wilks (author) (Search by this author)
https://orcid.org/0000-0001-5822-8399
(unauthenticated)
;
Christian A. Kaufmann (author) (Search by this author)
https://orcid.org/0000-0001-9168-2032
(unauthenticated)
;
Marcus Bär (author) (Search by this author)
https://orcid.org/0000-0001-8581-0691
(unauthenticated)
- Keyword
- Thin-film solar cell stack, interface, Chemical analysis, hard X-ray photoemission spectroscopy, HAXPES
- Date published
- 2024-05-06
- Updated at
- 2024-08-01 16:30:13 +0900
Direct Analysis of Stacked Au/Ti/In2O3/Al2O3/p+-Si Transport Mechanisms Using Operando Hard X-ray Photoelectron Spectroscopy
- Journal article
- Creator
-
Ibrahima Gueye (author) (Search by this author)
https://orcid.org/0000-0001-5296-3894
(unauthenticated)
National Institute for Materials Science
;
Shigenori Ueda (author) (Search by this author)National Institute for Materials Science
;
;Atsushi Ogura (author) (Search by this author)Takahiro Nagata (author) (Search by this author)National Institute for Materials Science
- Keyword
- Operando, HAXPES, Interfaces, In2O3, Al2O3, Band bending, Chemical-structures
- Date published
- 2024-05-28
- Updated at
- 2025-05-15 08:30:10 +0900
Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
- Journal article
- Creator
-
Takahiro Nagata (author) (Search by this author)
;
Asahiko Matsuda (author) (Search by this author)
;
Takashi Teramoto (author) (Search by this author)
https://orcid.org/0000-0002-9368-1284
(unauthenticated)
;
Dominic Gerlach (author) (Search by this author)
https://orcid.org/0000-0003-1859-0750
(unauthenticated)
;
Peng Shen (author) (Search by this author)
https://orcid.org/0000-0002-1971-5490
(unauthenticated)
;
Shigenori Ueda (author) (Search by this author)
;
Takako Kimura (author) (Search by this author)
https://orcid.org/0009-0007-0109-4482
(unauthenticated)
;
Christian Dussarrat (author) (Search by this author)
https://orcid.org/0009-0000-1063-6473
(unauthenticated)
;
Toyohiro Chikyow (author) (Search by this author)
- Keyword
- gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination
- Date published
- 2025-03-07
- Updated at
- 2025-03-26 17:26:31 +0900
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
- Journal article
- Creator
-
Shunsuke Yamashita (author) (Search by this author)
https://orcid.org/0000-0003-1702-1708
(unauthenticated)
;
;Sei Fukushima (author) (Search by this author)Jun Kikkawa (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science (NIMS)
;
;Ryoji Arai (author) (Search by this author)Yuya Kanitani (author) (Search by this author)
https://orcid.org/0009-0002-2154-5571
(unauthenticated)
;
Koji Kimoto (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science (NIMS)
;
Yoshihiro Kudo (author) (Search by this author)
- Keyword
- defect, GaN, EELS, 4D-STEM, HAADF-STEM, ABF-STEM, HAXPES
- Date published
- 2024-03-01
- Updated at
- 2024-03-19 16:56:29 +0900