Minigap-induced negative differential resistance in multilayer -based tunnel junctions
- Journal article
- Creator
-
;Seiya Kawasaki (author) (Search by this author)Kei Kinoshita (author) (Search by this author)
https://orcid.org/0009-0005-4586-734X
(unauthenticated)
;
Rai Moriya (author) (Search by this author)
https://orcid.org/0000-0001-7471-7432
(unauthenticated)
;
Momoko Onodera (author) (Search by this author)
https://orcid.org/0000-0001-9457-6796
(unauthenticated)
;
Yijin Zhang (author) (Search by this author)
https://orcid.org/0000-0003-1127-1124
(unauthenticated)
;
Kenji Watanabe (author) (Search by this author)
;
Takashi Taniguchi (author) (Search by this author)
;
Takao Sasagawa (author) (Search by this author)
https://orcid.org/0000-0003-0149-6696
(unauthenticated)
;
Tomoki Machida (author) (Search by this author)
https://orcid.org/0000-0002-1938-7415
(unauthenticated)
- Keyword
- Negative differential resistance, MoS2, tunnel junction
- Date published
- 2024-07-01
- Updated at
- 2025-02-06 12:30:24 +0900
Evidence of the Coulomb gap in the density of states of
- Journal article
- Creator
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;Michele Masseroni (author) (Search by this author);Tingyu Qu (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
;Thomas Ihn (author) (Search by this author)Klaus Ensslin (author) (Search by this author)
- Keyword
- MoS2, dual-gated exfoliated bilayer, electron localization
- Date published
- 2023-02-14
- Updated at
- 2025-02-28 12:30:25 +0900
Self-aligned and self-limiting van der Waals epitaxy of monolayer MoS2 for scalable 2D electronics
- Journal article
- Creator
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Yoshiki Sakuma (author) (Search by this author)National Institute for Materials Science
;
;Keisuke Atsumi (author) (Search by this author)Takanobu Hiroto (author) (Search by this author)National Institute for Materials Science
;
Jun Nara (author) (Search by this author)National Institute for Materials Science
;
Akihiro Ohtake (author) (Search by this author)National Institute for Materials Science
;
;Yuki Ono (author) (Search by this author);Takashi Matsumoto (author) (Search by this author);Yukihiro Muta (author) (Search by this author);Kai Takeda (author) (Search by this author);Emi Kano (author) (Search by this author);Toshiki Yasuno (author) (Search by this author);Xu Yang (author) (Search by this author);Nobuyuki Ikarashi (author) (Search by this author);Asato Suzuki (author) (Search by this author);Michio Ikezawa (author) (Search by this author);Shuhong Li (author) (Search by this author);Tomonori Nishimura (author) (Search by this author);Kaito Kanahashi (author) (Search by this author)Kosuke Nagashio (author) (Search by this author)
- Keyword
- MoS2, epitaxial growth, MOCVD
- Date published
- 2026-01-21
- Updated at
- 2026-01-29 16:30:04 +0900
The optical response of artificially twisted MoS$$_2$$ bilayers
- Journal article
- Creator
-
;M. Grzeszczyk (author) (Search by this author);J. Szpakowski (author) (Search by this author);A. O. Slobodeniuk (author) (Search by this author);T. Kazimierczuk (author) (Search by this author);M. Bhatnagar (author) (Search by this author)T. Taniguchi (author) (Search by this author)National Institute for Materials Science
;
K. Watanabe (author) (Search by this author)National Institute for Materials Science
;
;P. Kossacki (author) (Search by this author);M. Potemski (author) (Search by this author);A. Babiński (author) (Search by this author)M. R. Molas (author) (Search by this author)
- Keyword
- Interlayer twist, MoS2, Raman scattering
- Date published
- 2021-08-23
- Updated at
- 2025-03-01 08:30:17 +0900
Reliability Challenges in Equivalent-Oxide-Thickness Scaling with High-κ Er2O3 Dielectrics on Two-Dimensional MoS2 Field-Effect Transistors
- Journal article
- Creator
-
;Shuhong Li (author) (Search by this author);Ryotaro Otake (author) (Search by this author);Tomonori Nishimura (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Yoshiki Sakuma (author) (Search by this author)National Institute for Materials Science
;
Kosuke Nagashio (author) (Search by this author)
- Keyword
- High-κ dielectric, MoS2, 2D semiconductor
- Date published
- 2025-05-05
- Updated at
- 2026-07-29 11:45:27 +0900
Optimizing thermal energy harvesting in few-layer MoS2 with measurements of electron's effective mass in two-dimensional semiconductors
- Journal article
- Creator
-
Kuan-Cheng Lu (author) (Search by this author)
https://orcid.org/0009-0003-5351-9949
(unauthenticated)
;
Chetan Awasthi (author) (Search by this author)
https://orcid.org/0000-0002-6027-5095
(unauthenticated)
;
;Ta-Wei Chiu (author) (Search by this author)S. S. Islam (author) (Search by this author)
https://orcid.org/0000-0001-7696-5499
(unauthenticated)
;
Kimitoshi Kono (author) (Search by this author)
https://orcid.org/0000-0002-4446-4419
(unauthenticated)
;
Kazuhito Tsukagoshi (author) (Search by this author)
;
Wen-Bin Jian (author) (Search by this author)
https://orcid.org/0000-0002-1898-9641
(unauthenticated)
- Keyword
- Two-Dimensional Semiconductors, Seebeck Coefficient, MoS2, Mott’s Hopping Transport
- Date published
- 2026-03-01
- Updated at
- 2026-01-14 10:42:17 +0900