Minigap-induced negative differential resistance in multilayer 
<math>
  <mrow>
    <mi>Mo</mi>
    <msub>
      <mi>S</mi>
      <mn>2</mn>
    </msub>
  </mrow>
</math>
-based tunnel junctions

Seiya Kawasaki; Kei Kinoshita; Rai Moriya; Momoko Onodera; Yijin Zhang; Kenji Watanabe; Takashi Taniguchi; Takao Sasagawa; Tomoki Machida

doi:10.1103/physrevresearch.6.033011

論文 Minigap-induced negative differential resistance in multilayer

Mo S_{2}

-based tunnel junctions

Seiya Kawasaki ; Kei Kinoshita ; Rai Moriya ; Momoko Onodera ; Yijin Zhang ; Kenji Watanabe ; Takashi Taniguchi ; Takao Sasagawa ; Tomoki Machida

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引用

Seiya Kawasaki, Kei Kinoshita, Rai Moriya, Momoko Onodera, Yijin Zhang, Kenji Watanabe, Takashi Taniguchi, Takao Sasagawa, Tomoki Machida. Minigap-induced negative differential resistance in multilayer

Mo S_{2}

-based tunnel junctions. Physical Review Research. 2024, 6 (3), 033011. https://doi.org/10.1103/physrevresearch.6.033011

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(abstract)

Despite extensive research, the high-energy band properties of transition metal dichalcogenides remain unex- plored. Here, we reveal that a multilayer MoS2-based tunnel junction exhibits substantial negative differential resistance (NDR) owing to the presence of a minigap, which is the energy gap between the upper and lower bands of the valence band at the 􏰀 point. We fabricated a highly p-doped multilayer p+-MoS2/h-BN/p+-MoS2 tunnel junction. When a bias is applied across the junction, holes at the Fermi level at the 􏰀 point in the valence band of the source-side p+-MoS2 resonantly tunnel to the drain-side p+-MoS2 with momentum conservation. When the energy of the injected hole coincides with the minigap of the drain-side p+-MoS2, the tunneling conductance is suppressed; thus, NDR is observed in the current-voltage characteristics. We identified minigap-induced NDR over a broad range of MoS2 thicknesses, including the bulk, that was observable even at room temperature.

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