Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface
- Journal article
- Creator
-
Kongping Wu (author) (Search by this author)
https://orcid.org/0000-0001-5672-7610
(unauthenticated)
;
;Renxiang Cheng (author) (Search by this author);Leng Zhang (author) (Search by this author);Wenxiu Wang (author) (Search by this author);Fangzhen Li (author) (Search by this author)Meiyong Liao (author) (Search by this author)
- Keyword
- diamond, heat spreader, GaN, calculation
- Date published
- 2024-12-19
- Updated at
- 2025-04-22 08:30:20 +0900
The graphene-on-diamond structure with Ni-catalyzed under high temperature
- Journal article
- Creator
-
;Xiaolu Yuan (author) (Search by this author);Jinlong Liu (author) (Search by this author)Jiangwei Liu (author) (Search by this author)
;
;Junjun Wei (author) (Search by this author);Liangxian Chen (author) (Search by this author)Chengming Li (author) (Search by this author)
- Keyword
- diamond
- Date published
- 2023-10-18
- Updated at
- 2024-02-27 12:30:14 +0900
Calibration of binding energy and clarification of interfacial band bending for the Al2O3/diamond heterojunction
- Journal article
- Creator
-
J. W. Liu (author) (Search by this author)National Institute for Materials Science
;
T. Teraji (author) (Search by this author)National Institute for Materials Science
;
B. Da (author) (Search by this author)National Institute for Materials Science
;
Y. Koide (author) (Search by this author)National Institute for Materials Science
- Keyword
- binding energy calibration, carbon-related materials, XPS, diamond, Band bending
- Date published
- 2024-09-02
- Updated at
- 2024-09-13 12:30:32 +0900
Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor
- Journal article
- Creator
-
Yosuke Sasama (author) (Search by this author)
;
Takuya Iwasaki (author) (Search by this author)
;
Masataka Imura (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
;
Takashi Taniguchi (author) (Search by this author)
;
Yamaguchi Takahide (author) (Search by this author)
- Keyword
- diamond, field-effect transistors, hexagonal boron nitride
- Date published
- 2025-10-06
- Updated at
- 2025-10-21 16:06:02 +0900
Nitrogen concentration control during diamond growth for NV − centre formation
- Journal article
- Creator
-
T. Teraji (author) (Search by this author)National Institute for Materials Science
;
C. Shinei (author) (Search by this author)National Institute for Materials Science
;
;Y. Masuyama (author) (Search by this author)M. Miyakawa (author) (Search by this author)National Institute for Materials Science
;
T. Taniguchi (author) (Search by this author)National Institute for Materials Science
- Keyword
- diamond, HPHT, CVD, nitrogen, NV center
- Date published
- 2024-01-22
- Updated at
- 2024-07-31 08:30:16 +0900