Ab-initio phonon calculation for GaN / F-43m (216) / materials id 830
- Dataset
- Collection
- MDR phonon calculation database
- Creator
-
Atsushi Togo (author) (Search by this author)MaDIS, National Institute for Materials Science
- Keyword
- Phonon, GaN, F-43m (216)
- Date published
- Updated at
- 2023-05-14 19:05:25 +0900
Ab-initio phonon calculation for GaN / P6_3mc (186) / materials id 804
- Dataset
- Collection
- MDR phonon calculation database
- Creator
-
Atsushi Togo (author) (Search by this author)MaDIS, National Institute for Materials Science
- Keyword
- Phonon, GaN, P6_3mc (186)
- Date published
- Updated at
- 2023-05-14 19:03:39 +0900
Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control
- Journal article
- Creator
-
Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
Takanobu Hiroto (author) (Search by this author)National Institute for Materials Science
;
Takaaki Mano (author) (Search by this author)National Institute for Materials Science
;
;Yuri Itokazu (author) (Search by this author)Masafumi Jo (author) (Search by this author)
- Keyword
- MOVPE, GaN, InN, InGaN, XRD, Superlattice
- Date published
- 2026-03-21
- Updated at
- 2026-04-03 09:31:08 +0900
Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces
- Journal article
- Creator
-
Yoshihiro Irokawa (author) (Search by this author)
;
Mamoru Usami (author) (Search by this author)
https://orcid.org/0009-0002-3188-7380
(unauthenticated)
;
Jun Uzuhashi (author) (Search by this author)
;
Tadakatsu Ohkubo (author) (Search by this author)
;
Toshihide Nabatame (author) (Search by this author)
;
Yasuo Koide (author) (Search by this author)
- Keyword
- GaN
- Date published
- 2026-05-01
- Updated at
- 2026-05-13 10:14:20 +0900
Local defect and mid-gap state analysis of GaN using monochromated EELS combined with nanodiffraction and atomic-resolution imaging
- Journal article
- Creator
-
Shunsuke Yamashita (author) (Search by this author)
https://orcid.org/0000-0003-1702-1708
(unauthenticated)
;
;Sei Fukushima (author) (Search by this author)Jun Kikkawa (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science (NIMS)
;
;Ryoji Arai (author) (Search by this author)Yuya Kanitani (author) (Search by this author)
https://orcid.org/0009-0002-2154-5571
(unauthenticated)
;
Koji Kimoto (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science (NIMS)
;
Yoshihiro Kudo (author) (Search by this author)
- Keyword
- defect, GaN, EELS, 4D-STEM, HAADF-STEM, ABF-STEM, HAXPES
- Date published
- 2024-03-01
- Updated at
- 2024-03-19 16:56:29 +0900
Uncovering crystal structure evolution via nanobeam X-ray diffraction with a continuity-driven machine learning approach
- Journal article
- Creator
-
Zhendong Wu (author) (Search by this author)
https://orcid.org/0000-0002-9882-4133
(unauthenticated)
;
Tetsuya Tohei (author) (Search by this author)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Yusuke Hayashi (author) (Search by this author)
;
;Shigeyoshi Usami (author) (Search by this author);Masayuki Imanishi (author) (Search by this author);Yusuke Mori (author) (Search by this author);Junichi Takino (author) (Search by this author);Kazushi Sumitani (author) (Search by this author)Yasuhiko Imai (author) (Search by this author)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
;
Shigeru Kimura (author) (Search by this author)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
Akira Sakai (author) (Search by this author)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- Keyword
- GaN, nanoXRD, ML
- Date published
- 2026-02-15
- Updated at
- 2026-02-26 12:30:06 +0900
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
- Journal article
- Creator
-
Masahiro Hara (author) (Search by this author)
https://orcid.org/0000-0001-9748-8011
(unauthenticated)
;
Toshihide Nabatame (author) (Search by this author)
;
Yoshihiro Irokawa (author) (Search by this author)
;
;Tomomi Sawada (author) (Search by this author);Manami Miyamoto (author) (Search by this author);Hiromi Miura (author) (Search by this author);Tsunenobu Kimoto (author) (Search by this author)Yasuo Koide (author) (Search by this author)
- Keyword
- GaN
- Date published
- 2025-05-07
- Updated at
- 2025-05-08 12:30:16 +0900
Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface
- Journal article
- Creator
-
Kongping Wu (author) (Search by this author)
https://orcid.org/0000-0001-5672-7610
(unauthenticated)
;
;Renxiang Cheng (author) (Search by this author);Leng Zhang (author) (Search by this author);Wenxiu Wang (author) (Search by this author);Fangzhen Li (author) (Search by this author)Meiyong Liao (author) (Search by this author)
- Keyword
- diamond, heat spreader, GaN, calculation
- Date published
- 2024-12-19
- Updated at
- 2025-04-22 08:30:20 +0900
First-principles lattice thermal conductivity calculation for GaN / F-43m (216) / materials id 830
- Dataset
- Collection
- MDR lattice thermal conductivity calculation database
- Creator
-
Atsushi Togo (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science
- Keyword
- Lattice thermal conductivity, GaN
- Date published
- Updated at
- 2026-01-24 12:32:02 +0900
Machine learning assisted nanobeam X-ray diffraction based analysis on hydride vapor-phase epitaxy GaN
- Journal article
- Creator
-
;Zhendong Wu (author) (Search by this author)Yusuke Hayashi (author) (Search by this author)National Institute for Materials Science
;
;Tetsuya Tohei (author) (Search by this author);Kazushi Sumitani (author) (Search by this author);Yasuhiko Imai (author) (Search by this author);Shigeru Kimura (author) (Search by this author)Akira Sakai (author) (Search by this author)
- Keyword
- GaN, SPring-8, nanoXRD, Machine learning
- Date published
- 2025-08-01
- Updated at
- 2025-07-31 12:30:18 +0900