4 records found.
NF3 and F2 gas fluorination of GaN surface and Pt/GaN interface analyzed by hard X-ray photoelectron spectroscopy
- Journal article
- Creator
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Asahiko Matsuda (author) (Search by this author)National Institute for Materials Science
;
Takashi Teramoto (author) (Search by this author)
https://orcid.org/0000-0002-9368-1284
(unauthenticated)
;
Takahiro Nagata (author) (Search by this author)National Institute for Materials Science
;
Dominic Gerlach (author) (Search by this author)
https://orcid.org/0000-0003-1859-0750
(unauthenticated)
;
Peng Shen (author) (Search by this author)
https://orcid.org/0000-0002-1971-5490
(unauthenticated)
;
Shigenori Ueda (author) (Search by this author)National Institute for Materials Science
;
;Takako Kimura (author) (Search by this author);Christian Dussarrat (author) (Search by this author)Toyohiro Chikyow (author) (Search by this author)
- Keyword
- Fluorination, Surface passivation, hard X-ray photoelectron spectroscopy, Gallium nitride
- Date published
- 2024-03-19
- Updated at
- 2026-03-19 14:27:24 +0900
High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS2/i-GaN Vertical Heterojunction
- Journal article
- Creator
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;Sushmitha Veeralingam (author) (Search by this author)Liwen Sang (author) (Search by this author)National Institute for Materials Science
;
Hong Pang (author) (Search by this author)National Institute for Materials Science
;
Renzhi Ma (author) (Search by this author)National Institute for Materials Science
;
Sushmee Badhulika (author) (Search by this author)
- Keyword
- Gallium nitride, Molybdenum disulfide, Photodetector, Self-powered, Vertical heterojunction, Ultraviolet detection
- Date published
- 2023-12-20
- Updated at
- 2024-12-14 12:30:29 +0900
Effectiveness of fluorine termination at nitrogen vacancies inside gallium nitride crystals based on first-principles calculations
- Journal article
- Creator
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Yuki Fujishiro (author) (Search by this author)
https://orcid.org/0009-0006-7436-2911
(unauthenticated)
;
Tomoe Yayama (author) (Search by this author)
https://orcid.org/0000-0002-5708-8723
(unauthenticated)
;
Takahiro Nagata (author) (Search by this author)
;
Toyohiro Chikyow (author) (Search by this author)
;
Fumiko Akagi (author) (Search by this author)
https://orcid.org/0000-0003-4934-8465
(unauthenticated)
- Keyword
- Gallium nitride, First-principles calculations, Fluorine termination, Nitrogen vacancies
- Date published
- 2026-02-28
- Updated at
- 2026-04-03 10:13:47 +0900
Detection limit of defect-induced strain in GaN evaluated by valence EELS and correlated structural analysis
- Journal article
- Creator
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;Shunsuke Yamashita (author) (Search by this author)Sony Semiconductor Solutions CorporationJun Kikkawa (author) (Search by this author)Center for Basic Research on Materials/Advanced Materials Characterization Field/Electron Microscopy Group, National Institute for Materials Science
;
;Susumu Kusanagi (author) (Search by this author)Sony Semiconductor Solutions Corporation;Ichiro Nomachi (author) (Search by this author)Sony Semiconductor Solutions Corporation;Ryoji Arai (author) (Search by this author)Sony Semiconductor Solutions Corporation;Yuya Kanitani (author) (Search by this author)Sony Semiconductor Solutions CorporationKoji Kimoto (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science
;
Yoshihiro Kudo (author) (Search by this author)Sony Semiconductor Solutions Corporation
- Keyword
- Limit of detection, Detection threshold, Physical analysis, Gallium nitride, Valence electron energy loss spectroscopy (VEELS), Low-loss spectrum
- Date published
- 2026-01-01
- Updated at
- 2026-04-30 12:01:11 +0900