Download file (1.89MB)
Download as zip (1.86MB)

コレクション

引用

説明:

The effects of NF3 or F2 gas annealing on epitaxially grown GaN and its interface with sputter-deposited Pt were investigated using hard X-ray photoelectron spectroscopy.Annealing GaN and Pt/GaN samples in an NF3 atmosphere led to the emergence of prominent F 1s peaks and chemically shifted Ga 2p peaks, indicating the efficient formation of Ga–Fx species not only in the bare GaN surface but also in the Pt/GaN interface, even when the NF3 treatment was performed after the Pt was deposited.By contrast, F2 annealing also led to the fluorination of the GaN surface and nonfluorination of the Pt/GaN interface. Although the plasma sputtering process removed F from the surface, band shifts were observed when the treatment conditions were varied. The findings in this study suggest that NF3 treatment is an effective postprocessing method for fluorinating GaN-based systems before or after metaldeposition.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

キーワード: Fluorination, Surface passivation, hard X-ray photoelectron spectroscopy, Gallium nitride

刊行年月日: 2024-03-19

出版者: Elsevier BV

掲載誌:

• Applied Surface Science (ISSN: 01694332) vol. 659 159941

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1016/j.apsusc.2024.159941

関連資料:

その他の識別子:

連絡先:

更新時刻: 2024-03-26 14:50:33 +0900

MDRでの公開時刻: 2026-03-19 13:36:28 +0900