Detection limit of defect-induced strain in GaN evaluated by valence EELS and correlated structural analysis
- Journal article
- Creator
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;Shunsuke Yamashita (author) (Search by this author)Sony Semiconductor Solutions CorporationJun Kikkawa (author) (Search by this author)Center for Basic Research on Materials/Advanced Materials Characterization Field/Electron Microscopy Group, National Institute for Materials Science
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;Susumu Kusanagi (author) (Search by this author)Sony Semiconductor Solutions Corporation;Ichiro Nomachi (author) (Search by this author)Sony Semiconductor Solutions Corporation;Ryoji Arai (author) (Search by this author)Sony Semiconductor Solutions Corporation;Yuya Kanitani (author) (Search by this author)Sony Semiconductor Solutions CorporationKoji Kimoto (author) (Search by this author)Center for Basic Research on Materials, National Institute for Materials Science
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Yoshihiro Kudo (author) (Search by this author)Sony Semiconductor Solutions Corporation - Keyword
- Limit of detection, Detection threshold, Physical analysis, Gallium nitride, Valence electron energy loss spectroscopy (VEELS), Low-loss spectrum
- Date published
- 2026-01-01
- Updated at
- 2026-04-30 12:01:11 +0900
High Responsivity of Zero-Power-Consumption Ultraviolet Photodetector Using 2D-MoS2/i-GaN Vertical Heterojunction
- Journal article
- Creator
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;Sushmitha Veeralingam (author) (Search by this author)Liwen Sang (author) (Search by this author)National Institute for Materials Science
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Hong Pang (author) (Search by this author)National Institute for Materials Science
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Renzhi Ma (author) (Search by this author)National Institute for Materials Science
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Sushmee Badhulika (author) (Search by this author) - Keyword
- Gallium nitride, Molybdenum disulfide, Photodetector, Self-powered, Vertical heterojunction, Ultraviolet detection
- Date published
- 2023-12-20
- Updated at
- 2024-12-14 12:30:29 +0900
Continuous real-time O 1s core XPS spectra of initial O2 molecule adsorption on polar and m-plane surfaces of GaN
- Dataset
- Creator
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SUMIYA, Masatomo (author) (Search by this author)National Institute for Materials Science
- Keyword
- GaN, Gallium nitride, Oxidation, Adsorption, XPS, SPring-8
- Date published
- 2020-11-19
- Updated at
- 2024-01-05 22:13:22 +0900