4 records found.
Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
- Journal article
- Creator
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S. Yamada (author) (Search by this author)
https://orcid.org/0009-0004-5821-1078
(unauthenticated)
;
;A. Fujimoto (author) (Search by this author)S. Yagi (author) (Search by this author)
https://orcid.org/0000-0003-4490-6683
(unauthenticated)
;
H. Narui (author) (Search by this author)
https://orcid.org/0000-0003-0803-5550
(unauthenticated)
;
;E. Yamaguchi (author) (Search by this author)Y. Imanaka (author) (Search by this author)
- Keyword
- GaN, Double Heterostructures, Hole gas, Magnetoresistance, Spin-Orbit coupling
- Date published
- 2024-06-24
- Updated at
- 2024-07-13 08:30:10 +0900
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
Masataka Imura (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
- Keyword
- GaN, AlInN, etching, positive bevel edge termination
- Date published
- 2024-08-01
- Updated at
- 2024-08-02 12:30:52 +0900
Investigation of Deep States in GaN Metal-Oxide-Semiconductor Interfaces
- Journal article
- Creator
-
Yoshihiro Irokawa (author) (Search by this author)
;
Mamoru Usami (author) (Search by this author)
https://orcid.org/0009-0002-3188-7380
(unauthenticated)
;
Jun Uzuhashi (author) (Search by this author)
;
Tadakatsu Ohkubo (author) (Search by this author)
;
Toshihide Nabatame (author) (Search by this author)
;
Yasuo Koide (author) (Search by this author)
- Keyword
- GaN
- Date published
- 2026-05-01
- Updated at
- 2026-05-13 10:14:20 +0900
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
- Journal article
- Creator
-
Yoshihiro Irokawa (author) (Search by this author)National Institute for Materials Science
;
Toshihide Nabatame (author) (Search by this author)National Institute for Materials Science
;
;Tomomi Sawada (author) (Search by this author)National Institute for Materials Science;Manami Miyamoto (author) (Search by this author);Hiromi Miura (author) (Search by this author)Kazuhito Tsukagoshi (author) (Search by this author)National Institute for Materials Science
;
Yasuo Koide (author) (Search by this author)National Institute for Materials Science
- Keyword
- GaN
- Date published
- 2024-08-01
- Updated at
- 2024-09-02 12:30:27 +0900