ライセンス: In Copyright 資源タイプ: journal_article キーワード: gallium nitride
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Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer.pdf
Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer
論文
著者
Jun Uzuhashi SAMURAI ORCID ; Jun Chen SAMURAI ORCID ; Ryo Tanaka ; Shinya Takashima ; Masaharu Edo ; Tadakatsu Ohkubo SAMURAI ORCID ; Takashi Sekiguchi
キーワード
gallium nitride, atom probe tomography, transmission electron microscopy, cathodoluminescence
刊行年月日
2024-08-07
更新時刻
2024-08-03 08:30:15 +0900
Vacancy-type defects and their trapping-detrapping of charge carriers in ion-implanted GaN studied by positron annihilation.pdf
Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation
論文
著者
Akira Uedono ORCID ; Ryo Tanaka ORCID ; Shinya Takashima ORCID ; Katsunori Ueno ; Masaharu Edo ; Kohei Shima ORCID ; Shigefusa F. Chichibu ORCID ; Jun Uzuhashi SAMURAI ORCID ; Tadakatsu Ohkubo SAMURAI ORCID ; Shoji Ishibashi ORCID ; Kacper Sierakowski ORCID ; Michal Bockowski ORCID
キーワード
gallium nitride
刊行年月日
2024-02-29
更新時刻
2025-03-01 12:30:45 +0900
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam.pdf
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
論文
著者
Akira Uedono ; Hideki Sakurai ; Jun Uzuhashi SAMURAI ORCID ; Tetsuo Narita ; Kacper Sierakowski ; Shoji Ishibashi ; Shigefusa F. Chichibu ; Michal Bockowski ; Jun Suda ; Tadakatsu Ohokubo ; Nobuyuki Ikarashi ; Kazuhiro Hono SAMURAI ORCID ; Tetsu Kachi
キーワード
gallium nitride, vacancy, positron
刊行年月日
2023-03-15
更新時刻
2024-01-05 22:12:35 +0900