4 件のレコードが見つかりました。
Electrical activity of Mg clustering at nanoscale defects induced by N ion implantation in GaN
- ジャーナル論文
- 著者
-
;Kosuke Ishikawa (author) (この著者で検索)Emi Kano (author) (この著者で検索)
https://orcid.org/0000-0001-6134-4980
(unauthenticated)
;
Jun Uzuhashi (author) (この著者で検索)
;
;Kensuke Sumida (author) (この著者で検索)Tetsuo Narita (author) (この著者で検索)
https://orcid.org/0000-0002-0849-360X
(unauthenticated)
;
Masahiro Horita (author) (この著者で検索)
https://orcid.org/0000-0003-0008-6732
(unauthenticated)
;
;Junya Sahashi (author) (この著者で検索)Shun Lu (author) (この著者で検索)
https://orcid.org/0000-0002-7342-757X
(unauthenticated)
;
Jun Suda (author) (この著者で検索)
https://orcid.org/0000-0002-5453-4943
(unauthenticated)
;
Tadakatsu Ohkubo (author) (この著者で検索)
;
Tetsu Kachi (author) (この著者で検索)
https://orcid.org/0000-0002-4300-5720
(unauthenticated)
;
Nobuyuki Ikarashi (author) (この著者で検索)
https://orcid.org/0000-0002-5575-5780
(unauthenticated)
- キーワード
- gallium nitride, atom probe tomography
- 刊行年月日
- 2026-06-22
- 更新時刻
- 2026-06-25 09:46:49 +0900
Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer
- ジャーナル論文
- 著者
-
Jun Uzuhashi (author) (この著者で検索)National Institute for Materials Science Research Center for Magnetic and Spintronic Materials/Administrative Office
;
Jun Chen (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Defect Design Group
;
;Ryo Tanaka (author) (この著者で検索)Fuji Electric Corporation;Shinya Takashima (author) (この著者で検索)Fuji Electric Corporation;Masaharu Edo (author) (この著者で検索)Fuji Electric CorporationTadakatsu Ohkubo (author) (この著者で検索)National Institute for Materials Science Research Center for Magnetic and Spintronic Materials
;
Takashi Sekiguchi (author) (この著者で検索)University of Tsukuba
- キーワード
- gallium nitride, atom probe tomography, transmission electron microscopy, cathodoluminescence
- 刊行年月日
- 2024-08-07
- 更新時刻
- 2024-08-03 08:30:15 +0900
Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation
- ジャーナル論文
- 著者
-
Akira Uedono (author) (この著者で検索)
https://orcid.org/0000-0001-6224-4869
(unauthenticated)
;
Ryo Tanaka (author) (この著者で検索)
https://orcid.org/0000-0002-4058-7649
(unauthenticated)
;
Shinya Takashima (author) (この著者で検索)
https://orcid.org/0000-0002-3212-4521
(unauthenticated)
;
;Katsunori Ueno (author) (この著者で検索);Masaharu Edo (author) (この著者で検索)Kohei Shima (author) (この著者で検索)
https://orcid.org/0000-0003-0967-141X
(unauthenticated)
;
Shigefusa F. Chichibu (author) (この著者で検索)
https://orcid.org/0000-0001-9558-1642
(unauthenticated)
;
Jun Uzuhashi (author) (この著者で検索)
;
Tadakatsu Ohkubo (author) (この著者で検索)
;
Shoji Ishibashi (author) (この著者で検索)
https://orcid.org/0000-0002-4896-3530
(unauthenticated)
;
Kacper Sierakowski (author) (この著者で検索)
https://orcid.org/0000-0002-9447-1182
(unauthenticated)
;
Michal Bockowski (author) (この著者で検索)
https://orcid.org/0000-0003-1616-685X
(unauthenticated)
- キーワード
- gallium nitride
- 刊行年月日
- 2024-02-29
- 更新時刻
- 2025-03-01 12:30:45 +0900
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
- ジャーナル論文
- 著者
-
;Akira Uedono (author) (この著者で検索);Hideki Sakurai (author) (この著者で検索)Jun Uzuhashi (author) (この著者で検索)National Institute for Materials Science
;
;Tetsuo Narita (author) (この著者で検索);Kacper Sierakowski (author) (この著者で検索);Shoji Ishibashi (author) (この著者で検索);Shigefusa F. Chichibu (author) (この著者で検索);Michal Bockowski (author) (この著者で検索);Jun Suda (author) (この著者で検索);Tadakatsu Ohokubo (author) (この著者で検索);Nobuyuki Ikarashi (author) (この著者で検索)Kazuhiro Hono (author) (この著者で検索)National Institute for Materials Science
;
Tetsu Kachi (author) (この著者で検索)
- キーワード
- gallium nitride, vacancy, positron
- 刊行年月日
- 2023-03-15
- 更新時刻
- 2024-01-05 22:12:35 +0900