High Schottky barrier formation in tilted-dipole PdCoO2/ β -Ga2O3 (001) interfaces
- ジャーナル論文
- 著者
-
Takayuki Harada (author) (この著者で検索)
;
Takuro Nagai (author) (この著者で検索)
;
Kohei Sasaki (author) (この著者で検索)
https://orcid.org/0000-0002-8923-7703
(unauthenticated)
- キーワード
- Thin film, Ga2O3, Delafossite, Power devices, Schottky
- 刊行年月日
- 2026-06-01
- 更新時刻
- 2026-06-10 14:51:59 +0900
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
- ジャーナル論文
- 著者
-
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
;
Takashi Shinohe (author) (この著者で検索)FLOSFIA INC.
- キーワード
- Ga2O3, dislocation, HVPE, ELO
- 刊行年月日
- 2025-05-19
- 更新時刻
- 2025-05-21 16:30:09 +0900
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- ジャーナル論文
- 著者
-
Takayoshi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
;
Yuichi Oshima (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials
- キーワード
- Ga2O3, (-102), selective area growth, selective area etching
- 刊行年月日
- 2024-01-22
- 更新時刻
- 2025-01-25 12:30:12 +0900