Photoelectron Holographic Study of Atomic Structure of Si Dopants for Si-doped κ-Ga2O3(001)
- Journal article
- Creator
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;Yoshiyuki YAMASHITA (author) (Search by this author);Yuhua TSAI (author) (Search by this author);Yusuke HASHIMOTO (author) (Search by this author);Tomohiro MATSUSHITA (author) (Search by this author)Piero MAZZOLINI (author) (Search by this author)
- Keyword
- Photoelectron Holography, Ga2O3, dopant
- Date published
- 2026-07-10
- Updated at
- 2026-08-05 15:56:53 +0900
Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)
- Journal article
- Creator
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Yuhua Tsai (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science
;
;Yusuke Hashimoto (author) (Search by this author)NAIST;ZeXu Sun (author) (Search by this author)NAIST;Takuya Moriki (author) (Search by this author)NAIST;Takashi Tadamura (author) (Search by this author)NAISTTakahiro Nagata (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science
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;Piero Mazzolini (author) (Search by this author)University of Parma;Antonella Parisini (author) (Search by this author)University of Parma;Matteo Bosi (author) (Search by this author)IMEM-CNR;Luca Seravalli (author) (Search by this author)IMEM-CNR;Tomohiro Matsushita (author) (Search by this author)NAISTYoshiyuki Yamashita (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group, National Institute for Materials Science
- Keyword
- Ga2O3, κ-Ga2O3
- Date published
- 2024-04-03
- Updated at
- 2025-03-07 12:30:11 +0900