4 件のレコードが見つかりました。 1件目から4件目まで表示します。
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
- ジャーナル論文
- 著者
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Toshihide Nabatame (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)
;
Yoshihiro Irokawa (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
;
;Tomomi Sawada (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group;Hiromi Miura (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group;Manami Miyamoto (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics GroupTakashi Onaya (author) (この著者で検索)
https://orcid.org/0000-0002-2710-8623
(unauthenticated)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Yasuo Koide (author) (この著者で検索)National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
;
Kazuhito Tsukagoshi (author) (この著者で検索)National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
- キーワード
- Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
- 刊行年月日
- 2026-06-01
- 更新時刻
- 2026-08-18 11:30:17 +0900
Features of atomic layer deposition and its application to electronic devices
- ジャーナル論文
- 著者
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Toshihide Nabatame (author) (この著者で検索)National Institute for Materials Science
;
Takashi Onaya (author) (この著者で検索)
https://orcid.org/0000-0002-2710-8623
(unauthenticated)
National Institute for Materials Science
- キーワード
- atomic layer deposition
- 刊行年月日
- 2026-07-01
- 更新時刻
- 2026-10-29 09:58:36 +0900
Interface engineering of HfO 2 -based ferroelectric devices for crystal phase control and enhanced ferroelectricity using atomic-layer-deposited ZrO 2 nucleation layers
- ジャーナル論文
- 著者
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Takashi Onaya (author) (この著者で検索)
https://orcid.org/0000-0002-2710-8623
(unauthenticated)
National Institute for Materials Science
;
Toshihide Nabatame (author) (この著者で検索)National Institute for Materials Science
- キーワード
- atomic layer deposition, ferroelectric HfO2-based thin films, memory devices, interface engineering, crystal phase control
- 刊行年月日
- 2026-04-30
- 更新時刻
- 2026-07-13 17:01:06 +0900
From Mechanics to Electronics: Influence of ALD Interlayers on the Multiaxial Electro‐Mechanical Behavior of Metal–Oxide Bilayers
- ジャーナル論文
- 著者
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Johanna Byloff (author) (この著者で検索)
https://orcid.org/0000-0001-6026-6845
(unauthenticated)
;
Vivek Devulapalli (author) (この著者で検索)
https://orcid.org/0000-0002-1743-3246
(unauthenticated)
;
Daniele Casari (author) (この著者で検索)
https://orcid.org/0000-0003-2113-5070
(unauthenticated)
;
Thomas E. J. Edwards (author) (この著者で検索)
;
Claus O. W. Trost (author) (この著者で検索)
https://orcid.org/0000-0002-7570-688X
(unauthenticated)
;
Megan J. Cordill (author) (この著者で検索)
https://orcid.org/0000-0003-1142-8312
(unauthenticated)
;
Shuhel Altaf Husain (author) (この著者で検索)
https://orcid.org/0000-0002-1080-565X
(unauthenticated)
;
Pierre‐Olivier Renault (author) (この著者で検索)
https://orcid.org/0000-0002-0736-2333
(unauthenticated)
;
Damien Faurie (author) (この著者で検索)
https://orcid.org/0000-0001-7259-3958
(unauthenticated)
;
Barbara Putz (author) (この著者で検索)
https://orcid.org/0000-0001-9687-6346
(unauthenticated)
- キーワード
- atomic layer deposition, electromechanical properties, flexible polymer substrates, tensile testing, thin films
- 刊行年月日
- 2025-11-27
- 更新時刻
- 2026-01-20 11:54:44 +0900