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This review describes the features of atomic layer deposition (ALD) and electronic devices fabricated using this technique. Although ALD is often considered one of the simplest film deposition techniques, the features associated with ALD are not fully understood. This paper is systematically presented in six sections: the importance of the oxidant gas for Al2O3 deposition via ALD with trimethylaluminum (TMA), the effect of TMA on the resistivity of TiO2 films, the selective adsorption of the tris(dimethylaminosilane) (TDMAS) precursor on a metal-oxide underlayer for SiO2 deposition, the use of a Hf/Zr cocktail precursor for fabricating low-temperature ferroelectric HfxZr1−xO2 films, the use of a combination of two oxidant gases for In2O3 deposition via ALD with ethylcyclopentadienyl indium (InEtCp), and the importance of first depositing a layer of (HfO2)m/(SiO2)n or (HfO2)m/(Al2O3)n nanolaminate onto a GaN surface for HfSiOx or HfAlOx GaN devices, respectively. A deep understanding of the ALD technique is expected to play a crucial role in the future development of electronic devices.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: atomic layer deposition

刊行年月日: 2026-07-01

出版者: IOP Publishing

掲載誌:

• Applied Physics Express (ISSN: 18820786) vol. 19 issue. 7 070105

研究助成金:

• Ministry of Education, Culture, Sports, Science and Technology JPJ005357
• Japan Society for the Promotion of Science JP24K17304

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.35848/1882-0786/ae86ad

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更新時刻: 2026-10-29 09:58:36 +0900

MDRでの公開時刻: 2026-10-29 12:27:41 +0900