3 records found.
Analysis of In x Ga1− x N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control
- Journal article
- Creator
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Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
Takanobu Hiroto (author) (Search by this author)National Institute for Materials Science
;
Takaaki Mano (author) (Search by this author)National Institute for Materials Science
;
;Yuri Itokazu (author) (Search by this author)Masafumi Jo (author) (Search by this author) - Keyword
- MOVPE, GaN, InN, InGaN, XRD, Superlattice
- Date published
- 2026-03-21
- Updated at
- 2026-04-03 09:31:08 +0900
Fabrication of coherent γ-Al2O3/Ga2O3 superlattices on MgAl2O4 substrates
- Journal article
- Creator
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;Yuji Kato (author) (Search by this author)Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
Yoshiko Nakayama (author) (Search by this author)National Institute for Materials Science
;
Masaki Takeguchi (author) (Search by this author)National Institute for Materials Science
;
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, Superlattice
- Date published
- 2019-06-01
- Updated at
- 2024-01-05 22:11:34 +0900
α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
;Yuji Kato (author) (Search by this author)Masataka Imura (author) (Search by this author)National Institute for Materials Science
;
Yoshiko Nakayama (author) (Search by this author)National Institute for Materials Science
;
Masaki Takeguchi (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, Superlattice
- Date published
- 2018-06-01
- Updated at
- 2024-01-05 22:12:13 +0900