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Article(4)
Keyword
Ga2O3 (3)
(011) (1)
4H-SiC (1)
AlN (1)
NiO (1)
Schottky barrier diodes (1)
crystallographic etching (1)
epitaxial relationship (1)
lithography (1)
(more)
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Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International (3)
In Copyright (1)
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application/vnd.openxmlformats-officedocument.wordprocessingml.document (4)
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File type: application/vnd.openxmlformats-officedocument.wordprocessingml.document
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4 records found.
Near-vertical plasma-free HCl gas etching on (011) β-Ga
2
O
3
Article
Creator
Takayoshi Oshima
;
Yuichi Oshima
Keyword
Ga2O3
,
crystallographic etching
,
(011)
Date published
2025-01-01
Updated at
2026-01-24 15:43:35 +0900
Fully vertical AlN-on-SiC Schottky barrier diodes
Article
Creator
Hironori Okumura
;
Masataka Imura
; Fuga Miyazawa ; Lorenzo Mainini
Keyword
AlN
,
4H-SiC
,
Schottky barrier diodes
Date published
2024-10-01
Updated at
2025-10-21 15:50:30 +0900
Epitaxial relationship of NiO on (-102) β-Ga2O3
Article
Creator
Takayoshi Oshima
; Shinji Nakagomi
Keyword
Ga2O3
,
NiO
,
epitaxial relationship
Date published
2023-12-01
Updated at
2024-11-23 16:30:35 +0900
Self-aligned patterning on β-Ga2O3 substrates via backside-exposure photolithography
Article
Creator
Takayoshi Oshima
Keyword
Ga2O3
,
lithography
Date published
2023-01-01
Updated at
2024-01-24 11:20:15 +0900
Keyword
Ga2O3
(3)
(011)
(1)
4H-SiC
(1)
AlN
(1)
NiO
(1)
Schottky barrier diodes
(1)
crystallographic etching
(1)
epitaxial relationship
(1)
lithography
(1)
RDE metadata def
RDE invoice schema
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1
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