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4 件のレコードが見つかりました。 1件目から4件目まで表示します。

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1-s2.0-S0040609024003493-main.pdf
Compositional changes between metastable SnO and stable SnO2 in a sputtered film for p-type thin-film transistors
ジャーナル論文
著者
ORCID ;
Toshihide Nabatame (author) (この著者で検索)
;
Jong Won Chung (author) (この著者で検索)
ORCID ;
Tomomi Sawada (author) (この著者で検索)
;
Hiromi Miura (author) (この著者で検索)
;
Manami Miyamoto (author) (この著者で検索)
;
Kazuhito Tsukagoshi (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
p-type SnO, Thin-film transistors, Sputtering, High vacuum Annealing
刊行年月日
2024-10-09
更新時刻
2024-10-15 16:30:30 +0900
Irokawa_2024_ECS_J._Solid_State_Sci._Technol._13_085003.pdf
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO2 Process
ジャーナル論文
著者
Yoshihiro Irokawa (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Toshihide Nabatame (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Tomomi Sawada (author) (この著者で検索)
National Institute for Materials Science
;
Manami Miyamoto (author) (この著者で検索)
;
Hiromi Miura (author) (この著者で検索)
;
Kazuhito Tsukagoshi (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI ;
Yasuo Koide (author) (この著者で検索)
National Institute for Materials Science
ORCID SAMURAI
キーワード
GaN
刊行年月日
2024-08-01
更新時刻
2024-09-02 12:30:27 +0900
Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
ジャーナル論文
著者
Toshihide Nabatame (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group
ORCID SAMURAI ;
Tomomi Sawada (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Hiromi Miura (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Manami Miyamoto (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
;
Takashi Onaya (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
ORCID ;
Yasuo Koide (author) (この著者で検索)
National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group
ORCID SAMURAI ;
Kazuhito Tsukagoshi (author) (この著者で検索)
National Institute for Materials Science Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group
ORCID SAMURAI
キーワード
Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
刊行年月日
2026-06-01
更新時刻
2026-08-18 11:30:17 +0900
1-s2.0-S1369800125003439-main.pdf
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
ジャーナル論文
著者
Masahiro Hara (author) (この著者で検索)
ORCID ; ORCID SAMURAI ; ORCID SAMURAI ;
Tomomi Sawada (author) (この著者で検索)
;
Manami Miyamoto (author) (この著者で検索)
;
Hiromi Miura (author) (この著者で検索)
;
Tsunenobu Kimoto (author) (この著者で検索)
;
Yasuo Koide (author) (この著者で検索)
キーワード
GaN
刊行年月日
2025-05-07
更新時刻
2025-05-08 12:30:16 +0900
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