5 records found.
Strained Organic Thin‐Film Single Crystals for High‐Mobility and High‐Frequency Transistors
- Journal article
- Creator
-
;Mizuki Abe (author) (Search by this author)Yu Yamashita (author) (Search by this author)National Institute for Materials Science
;
;Taiki Sawada (author) (Search by this author);Tatsuyuki Makita (author) (Search by this author);Shohei Kumagai (author) (Search by this author);Shun Watanabe (author) (Search by this author)Jun Takeya (author) (Search by this author)National Institute for Materials Science
- Keyword
- organic semiconductor, transistor
- Date published
- 2025-06-17
- Updated at
- 2025-11-18 12:30:06 +0900
Oxygen-pressure driven balancing of interface and bulk scattering in amorphous oxide semiconductor thin-film transistors
- Journal article
- Creator
-
;Che-Yi Lin (author) (Search by this author)Yu-Ching Kuo (author) (Search by this author)
https://orcid.org/0009-0008-1978-4016
(unauthenticated)
;
;I-Chen Liu (author) (Search by this author);Feng-Shou Yang (author) (Search by this author);Yuan-Ming Chang (author) (Search by this author);Po-Wen Chiu (author) (Search by this author);Toshihide Nabatame (author) (Search by this author);Mengjiao Li (author) (Search by this author)Kazuhito Tsukagoshi (author) (Search by this author)
;
Yen-Fu Lin (author) (Search by this author)
https://orcid.org/0000-0002-1545-9143
(unauthenticated)
- Keyword
- Oxide, thin film, transistor
- Date published
- 2025-09-05
- Updated at
- 2025-09-26 17:46:31 +0900
Diamond CMOS technology
- Conference presentation
- Creator
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Meiyong Liao (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
;Wen Zhao (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials ScienceSatoshi Koizumi (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
- Keyword
- Diamond, n-type, transistor
- Date published
- Updated at
- 2025-05-22 08:30:34 +0900
P-Channel MOSFETs on Phosphorous-Doped n-Type Diamond
- Journal article
- Creator
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Wen Zhao (author) (Search by this author)
https://orcid.org/0000-0001-8159-8195
(unauthenticated)
National Institute for Materials Science
;
Satoshi Koizumi (author) (Search by this author)National Institute for Materials Science
;
Meiyong Liao (author) (Search by this author)National Institute for Materials Science
- Keyword
- Diamond, n-type, transistor
- Date published
- 2024-10-24
- Updated at
- 2024-12-05 12:47:42 +0900
[Research Highlights Vol.77] New TEM Technique Creates 2.8nm Transistor
- Magazine
- Collection
- Research Highlights
- Creator
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International Center for Materials Nanoarchitectonics (WPI-MANA) (author) (Search by this author)National Institute for Materials Science
- Keyword
- carbon nanotube, molecular junction, chirality, transistor, metal-semiconductor transition, quantum transport, in situ electron microscopy, one dimensional materials, graphene, gold probes
- Date published
- 2022-07-26
- Updated at
- 2023-12-26 21:34:23 +0900