論文 Oxygen-pressure driven balancing of interface and bulk scattering in amorphous oxide semiconductor thin-film transistors

Che-Yi Lin ; Yu-Ching Kuo ORCID ; I-Chen Liu ; Feng-Shou Yang ; Yuan-Ming Chang ; Po-Wen Chiu ; Toshihide Nabatame ; Mengjiao Li ; Kazuhito Tsukagoshi SAMURAI ORCID ; Yen-Fu Lin ORCID

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Che-Yi Lin, Yu-Ching Kuo, I-Chen Liu, Feng-Shou Yang, Yuan-Ming Chang, Po-Wen Chiu, Toshihide Nabatame, Mengjiao Li, Kazuhito Tsukagoshi, Yen-Fu Lin. Oxygen-pressure driven balancing of interface and bulk scattering in amorphous oxide semiconductor thin-film transistors. Materials Today Electronics. 2025, 14 (), 100171. https://doi.org/10.1016/j.mtelec.2025.100171

説明:

(abstract)

Oxygen vacancies (VO) critically influence the electronic properties and stability of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). Here, we investigate the impact of oxygen partial pressure during film deposition on charge transport mechanisms in 10-nm-thick silicon-doped indium oxide (ISO) TFTs. By adjusting the Ar:O2 ratio (11:1, 8:4, and 6:6), we observe a shift from interface-limited to bulk-scattering-dominated transport. Higher O2 pressure leads to increased subthreshold swing (SS), positive threshold voltage (Vth) shifts, and larger current fluctuations, suggesting greater charge trapping and mobility degradation. Lowfrequency noise (LFN) analysis further reveals a shift in the dominant noise mechanism: interface charge trapping dominates at low O2 pressure, while bulk carrier scattering prevails at high O2 pressure. The extracted trap density (Nit) increases by nearly two orders of magnitude, confirming the role of fully oxidized indium atoms in the conducting channel as charge-scattering centers. These findings establish oxygen pressure as a key parameter for balancing interface and bulk effects in AOS TFTs and provide a pathway for optimizing device performance and stability in next-generation oxide electronics.

権利情報:

キーワード: Oxide, thin film, transistor

刊行年月日: 2025-09-05

出版者: Elsevier BV

掲載誌:

  • Materials Today Electronics (ISSN: 27729494) vol. 14 100171

研究助成金:

  • National Natural Science Foundation of China 62304320
  • Kogakuin University
  • National Science and Technology Council 113\u20132811-M-005\u2013024
  • National Science and Technology Council 113\u20132811-M-005\u2013020
  • National Science and Technology Council 113\u20132119-M-007\u2013015-MBK
  • National Science and Technology Council NSTC 112\u20132628-M-005\u2013001-MY3

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.5775

公開URL: https://doi.org/10.1016/j.mtelec.2025.100171

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更新時刻: 2025-09-26 17:46:31 +0900

MDRでの公開時刻: 2025-09-24 12:18:53 +0900

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