Article Oxygen-pressure driven balancing of interface and bulk scattering in amorphous oxide semiconductor thin-film transistors

Che-Yi Lin ; Yu-Ching Kuo ORCID ; I-Chen Liu ; Feng-Shou Yang ; Yuan-Ming Chang ; Po-Wen Chiu ; Toshihide Nabatame ; Mengjiao Li ; Kazuhito Tsukagoshi SAMURAI ORCID ; Yen-Fu Lin ORCID

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Che-Yi Lin, Yu-Ching Kuo, I-Chen Liu, Feng-Shou Yang, Yuan-Ming Chang, Po-Wen Chiu, Toshihide Nabatame, Mengjiao Li, Kazuhito Tsukagoshi, Yen-Fu Lin. Oxygen-pressure driven balancing of interface and bulk scattering in amorphous oxide semiconductor thin-film transistors. Materials Today Electronics. 2025, 14 (), 100171. https://doi.org/10.1016/j.mtelec.2025.100171

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(abstract)

Oxygen vacancies (VO) critically influence the electronic properties and stability of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs). Here, we investigate the impact of oxygen partial pressure during film deposition on charge transport mechanisms in 10-nm-thick silicon-doped indium oxide (ISO) TFTs. By adjusting the Ar:O2 ratio (11:1, 8:4, and 6:6), we observe a shift from interface-limited to bulk-scattering-dominated transport. Higher O2 pressure leads to increased subthreshold swing (SS), positive threshold voltage (Vth) shifts, and larger current fluctuations, suggesting greater charge trapping and mobility degradation. Lowfrequency noise (LFN) analysis further reveals a shift in the dominant noise mechanism: interface charge trapping dominates at low O2 pressure, while bulk carrier scattering prevails at high O2 pressure. The extracted trap density (Nit) increases by nearly two orders of magnitude, confirming the role of fully oxidized indium atoms in the conducting channel as charge-scattering centers. These findings establish oxygen pressure as a key parameter for balancing interface and bulk effects in AOS TFTs and provide a pathway for optimizing device performance and stability in next-generation oxide electronics.

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Keyword: Oxide, thin film, transistor

Date published: 2025-09-05

Publisher: Elsevier BV

Journal:

  • Materials Today Electronics (ISSN: 27729494) vol. 14 100171

Funding:

  • National Natural Science Foundation of China 62304320
  • Kogakuin University
  • National Science and Technology Council 113\u20132811-M-005\u2013024
  • National Science and Technology Council 113\u20132811-M-005\u2013020
  • National Science and Technology Council 113\u20132119-M-007\u2013015-MBK
  • National Science and Technology Council NSTC 112\u20132628-M-005\u2013001-MY3

Manuscript type: Author's original (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5775

First published URL: https://doi.org/10.1016/j.mtelec.2025.100171

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Updated at: 2025-09-26 17:46:31 +0900

Published on MDR: 2025-09-24 12:18:53 +0900

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