Meiyong Liao
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science)
;
Wen Zhao
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science)
;
Satoshi Koizumi
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science)
コレクション
引用
説明:
(abstract)The current silicon complementary metal-oxide-semiconductor (CMOS) technology has been facing bottlenecks in the conditions of high-power density, high frequency, high temperature, and strong radiation. Diamond CMOS has long been pursued to achieve performances beyond the capability of conventional silicon electronics. By using diamond electronics, not only can the thermal management demands for conventional semiconductors be alleviated but these devices are also more energy efficient and can endure much higher breakdown voltages and harsh environments. On the other hand, with the development of diamond growth technologies, power electronics, spintronics, and microelectromechanical system (MEMS) sensors operatable under high-temperature and strong-radiation conditions, the demand for peripheral circuitry based on diamond CMOS devices has increased for monolithic integration.
権利情報:
キーワード: Diamond, n-type, transistor
会議: The 18th International Conference on New Diamond and Nano Carbons (2025-05-11 - 2025-05-15)
研究助成金:
原稿種別: 論文以外のデータ
MDR DOI: https://doi.org/10.48505/nims.5493
公開URL:
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-05-22 08:30:34 +0900
MDRでの公開時刻: 2025-05-22 08:23:08 +0900
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NDNC2025_abstract_Liao_CMOS.pdf
(サムネイル)
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サイズ | 268KB | 詳細 |