Meiyong Liao
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science)
;
Wen Zhao
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science)
;
Satoshi Koizumi
(Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science)
Collection
Citation
Description:
(abstract)The current silicon complementary metal-oxide-semiconductor (CMOS) technology has been facing bottlenecks in the conditions of high-power density, high frequency, high temperature, and strong radiation. Diamond CMOS has long been pursued to achieve performances beyond the capability of conventional silicon electronics. By using diamond electronics, not only can the thermal management demands for conventional semiconductors be alleviated but these devices are also more energy efficient and can endure much higher breakdown voltages and harsh environments. On the other hand, with the development of diamond growth technologies, power electronics, spintronics, and microelectromechanical system (MEMS) sensors operatable under high-temperature and strong-radiation conditions, the demand for peripheral circuitry based on diamond CMOS devices has increased for monolithic integration.
Rights:
Keyword: Diamond, n-type, transistor
Conference: The 18th International Conference on New Diamond and Nano Carbons (2025-05-11 - 2025-05-15)
Funding:
Manuscript type: Not a journal article
MDR DOI: https://doi.org/10.48505/nims.5493
First published URL:
Related item:
Other identifier(s):
Contact agent:
Updated at: 2025-05-21 16:10:52 +0900
Published on MDR: 2025-05-22 08:23:08 +0900
| Filename | Size | |||
|---|---|---|---|---|
| Filename |
NDNC2025_abstract_Liao_CMOS.pdf
(Thumbnail)
application/pdf |
Size | 268 KB | Detail |