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説明:

P-channel metal-oxide-semiconductor fieldeffect transistors (MOSFETs) have been demonstrated on phosphorus-doped n-type diamond epilayers. The p-channel nature arises from the surface conductivity resulting from hydrogenated termination on the n-type diamond surface. The MOSFET exhibits normally-on properties and shows a threshold of 1.8 V for the phosphorus concentration of 1016 cm−3 and an on/off ratio of 107. The maximum drain current is approximately −4.5 mA/mm and the transconductance is 0.75 mS/mm, which decreases as the phosphorus concentration in the n-type diamond epilayer increases. The emonstration of p-channel MOSFETs on n-type diamond epilayers paves the way for the development of complementary MOS (CMOS) circuits on a single diamond wafer.

権利情報:

• In Copyright
  This work has been submitted to the IEEE for possible publication. Copyright may be transferred without notice, after which this version may no longer be accessible.

キーワード: Diamond, n-type, transistor

刊行年月日: 2024-10-24

出版者: Institute of Electrical and Electronics Engineers (IEEE)

掲載誌:

• IEEE Electron Device Letters (ISSN: 07413106) vol. 45 issue. 12 p. 2268-2271

研究助成金:

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.5060

公開URL: https://doi.org/10.1109/led.2024.3485683

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更新時刻: 2024-12-05 12:47:42 +0900

MDRでの公開時刻: 2024-12-05 12:47:42 +0900