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P-channel metal-oxide-semiconductor fieldeffect transistors (MOSFETs) have been demonstrated on phosphorus-doped n-type diamond epilayers. The p-channel nature arises from the surface conductivity resulting from hydrogenated termination on the n-type diamond surface. The MOSFET exhibits normally-on properties and shows a threshold of 1.8 V for the phosphorus concentration of 1016 cm−3 and an on/off ratio of 107. The maximum drain current is approximately −4.5 mA/mm and the transconductance is 0.75 mS/mm, which decreases as the phosphorus concentration in the n-type diamond epilayer increases. The emonstration of p-channel MOSFETs on n-type diamond epilayers paves the way for the development of complementary MOS (CMOS) circuits on a single diamond wafer.

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Keyword: Diamond, n-type, transistor

Date published: 2024-10-24

Publisher: Institute of Electrical and Electronics Engineers (IEEE)

Journal:

• IEEE Electron Device Letters (ISSN: 07413106) vol. 45 issue. 12 p. 2268-2271

Funding:

Manuscript type: Author's version (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5060

First published URL: https://doi.org/10.1109/led.2024.3485683

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Updated at: 2024-12-05 12:47:42 +0900

Published on MDR: 2024-12-05 12:47:42 +0900